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Metal Hydride Compressor for High-Pressure (875 bar) Hydrogen Delivery

Johnson, Terry A.; Laros, James H.; Bowman, Robert C.; Smith, D.B.; Anovitz, Lawrence M.; Jensen, Craig M.

Metal hydride hydrogen compression utilizes a reversible heat-driven interaction of a hydride-forming metal alloy with hydrogen gas. This paper reports on the development of a laboratory scale two-stage Metal Hydride Compressor (MHC) system with a feed pressure of 150 bar delivering high purity H2 gas at outlet pressures up to 875 bar. Stage 1 and stage 2 AB2 metal hydrides are identified based on experimental characterization of the pressure-composition-temperature (PCT) behavior of candidate materials. The selected metal hydrides are each combined with expanded natural graphite, increasing the thermal conductivity of the composites by an order of magnitude. These composites are integrated in two compressor beds with internal heat exchangers that alternate between hydrogenation and dehydrogenation cycles by thermally cycling between 20 °C and 150 °C. The prototype compressor achieved compression of hydrogen from 150 bar to 700 bar with an average flow rate of 33.6 g/hr.

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Development of Single Photon Sources in GaN

Mounce, Andrew M.; Wang, George W.; Schultz, Peter A.; Titze, Michael T.; Campbell, DeAnna M.; Lu, Ping L.; Henshaw, Jacob D.

The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li+ and He+, but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.

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Xyce™ Parallel Electronic Simulator Users' Guide (V.7.6)

Keiter, Eric R.; Russo, Thomas V.; Schiek, Richard S.; Thornquist, Heidi K.; Mei, Ting M.; Verley, Jason V.; Aadithya, Karthik V.; Schickling, Joshua D.

This manual describes the use of the Xyce™ Parallel Electronic Simulator. Xyce™ has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: (1) Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. (2) A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. (3) Device models that are specifically tailored to meet Sandia's needs, including some radiation-aware devices (for Sandia users only). (4) Object-oriented code design and implementation using modern coding practices. Xyce™ is a parallel code in the most general sense of the phrase—a message passing parallel implementation—which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel eficiency is achieved as the number of processors grows.

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Empirical relationships between environmental factors and soil organic carbon produce comparable prediction accuracy to machine learning

Soil Science Society of America Journal

Mishra, Umakant; Yeo, Kyongmin; Adhikari, Kabindra; Riley, William J.; Hoffman, Forrest M.; Hudson, Corey

Accurate representation of environmental controllers of soil organic carbon (SOC) stocks in Earth System Model (ESM) land models could reduce uncertainties in future carbon–climate feedback projections. Using empirical relationships between environmental factors and SOC stocks to evaluate land models can help modelers understand prediction biases beyond what can be achieved with the observed SOC stocks alone. In this study, we used 31 observed environmental factors, field SOC observations (n = 6,213) from the continental United States, and two machine learning approaches (random forest [RF] and generalized additive modeling [GAM]) to (a) select important environmental predictors of SOC stocks, (b) derive empirical relationships between environmental factors and SOC stocks, and (c) use the derived relationships to predict SOC stocks and compare the prediction accuracy of simpler model developed with the machine learning predictions. Out of the 31 environmental factors we investigated, 12 were identified as important predictors of SOC stocks by the RF approach. In contrast, the GAM approach identified six (of those 12) environmental factors as important controllers of SOC stocks: potential evapotranspiration, normalized difference vegetation index, soil drainage condition, precipitation, elevation, and net primary productivity. The GAM approach showed minimal SOC predictive importance of the remaining six environmental factors identified by the RF approach. Our derived empirical relations produced comparable prediction accuracy to the GAM and RF approach using only a subset of environmental factors. The empirical relationships we derived using the GAM approach can serve as important benchmarks to evaluate environmental control representations of SOC stocks in ESMs, which could reduce uncertainty in predicting future carbon–climate feedbacks.

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Xyce™ Parallel Electronic Simulator Reference Guide (V.7.6)

Keiter, Eric R.; Russo, Thomas V.; Schiek, Richard S.; Thornquist, Heidi K.; Mei, Ting M.; Verley, Jason V.; Aadithya, Karthik V.; Schickling, Joshua D.

This document is a reference guide to the Xyce™ Parallel Electronic Simulator, and is a companion document to the Xyce™ Users' Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce™. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce™ Users' Guide.

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Results 2826–2850 of 96,771
Results 2826–2850 of 96,771