Publications

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This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.

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Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads. Our work leverages the underlying physics of emerging devices to develop probabilistic neural circuits for RNGs from a given distribution. However, codesign for novel circuits and systems that leverage inherent device stochasticity is a hard problem. This is mostly due to the large design space and complexity of doing so. It requires concurrent input from multiple areas in the design stack from algorithms, architectures, circuits, to devices. In this paper, we present examples of optimal circuits developed leveraging AI-enhanced codesign techniques using constraints from emerging devices and algorithms. Our AI-enhanced codesign approach accelerated design and enabled interactions between experts from different areas of the micro-electronics design stack including theory, algorithms, circuits, and devices. We demonstrate optimal probabilistic neural circuits using magnetic tunnel junction and tunnel diode devices that generate an RNG from a given distribution.

Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads. Our work leverages the underlying physics of emerging devices to develop probabilistic neural circuits for RNGs from a given distribution. However, codesign for novel circuits and systems that leverage inherent device stochasticity is a hard problem. This is mostly due to the large design space and complexity of doing so. It requires concurrent input from multiple areas in the design stack from algorithms, architectures, circuits, to devices. In this paper, we present examples of optimal circuits developed leveraging AI-enhanced codesign techniques using constraints from emerging devices and algorithms. Our AI-enhanced codesign approach accelerated design and enabled interactions between experts from different areas of the micro-electronics design stack including theory, algorithms, circuits, and devices. We demonstrate optimal probabilistic neural circuits using magnetic tunnel junction and tunnel diode devices that generate an RNG from a given distribution.

While it is likely practically a bad idea to shrink a transistor to the size of an atom, there is no arguing that it would be fantastic to have atomic-scale control over every aspect of a transistor – a kind of crystal ball to understand and evaluate new ideas. This project showed that it was possible to take a niche technique used to place dopants in silicon with atomic precision and apply it broadly to study opportunities and limitations in microelectronics. In addition, it laid the foundation to attaining atomic-scale control in semiconductor manufacturing more broadly.