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Power signatures of electric field and thermal switching regimes in memristive SET transitions

Journal of Physics D: Applied Physics

Hughart, David R.; Gao, Xujiao; Mamaluy, Denis; Marinella, Matthew; Mickel, Patrick R.

We present a study of the 'snap-back' regime of resistive switching hysteresis in bipolar TaOx memristors, identifying power signatures in the electronic transport. Using a simple model based on the thermal and electric field acceleration of ionic mobilities, we provide evidence that the 'snap-back' transition represents a crossover from a coupled thermal and electric-field regime to a primarily thermal regime, and is dictated by the reconnection of a ruptured conducting filament. We discuss how these power signatures can be used to limit filament radius growth, which is important for operational properties such as power, speed, and retention.

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TYPE Journal Article YEAR 2016
DOIOSTIScopus

Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew J.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy; Doyle, Barney L.; Wolfley, Steven; Dodd, Paul E.; Shaneyfelt, Marty R.; Mclain, Michael; Marinella, Matthew

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

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TYPE Presentation YEAR 2014
OSTIScopusOSTIScopus

Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew J.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy; Doyle, Barney L.; Wolfley, Steven; Dodd, Paul E.; Shaneyfelt, Marty R.; Mclain, Michael; Marinella, Matthew

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

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TYPE Conference Poster YEAR 2014
OSTIScopus
Results 76–100 of 139
Results 76–100 of 139
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