A CMOS Compatible Forming Free TaOx ReRAM
Abstract not provided.
Publications
Search results
Jump to search filtersNonlinear Conduction in Tantalum Oxide Resistive Memory Without a Select Device
Abstract not provided.
A CMOS Compatible Forming Free TaOx ReRAM - updated
Abstract not provided.
A CMOS Compatible, Forming Free TaOx ReRAM
ECS Transactions (Online)
Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. Here, we demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance.
Update on Elevated Temperature Reliability Testing of 1200 V SiC MOSFETs
Abstract not provided.
Progress in SiC MOSFET Reliability
Abstract not provided.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
A CMOS Compatible Forming Free TaOx ReRAM
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
Wide-Bandgap Power Semiconductor Research at Sandia National Laboratories
Abstract not provided.
A CMOS Compatible Forming Free TaOx ReRAM
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
High Temperature Reliability of 1200 V 33 A SiC DMOSFETs
Abstract not provided.
Results 126–139 of 139