The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a GaxOy interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al2O3/GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al2O3/GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al2O3/GaxOy/GaN structure that complement the electrical mapping results. This analysis shows that a higher GaxOy content correlates with higher interface state defects for trap energies deep in the band gap.
Modern concepts for next generation pulsed power (NGPP) are slated to deliver up to ten times the energy of Z today. An increase of this magnitude is concerning insofar that Z currently exhibits sizable amounts of inner magnetically insulated transmission line (MITL) loss current on the order of 5-10%. Loss phenomenon in these systems are complex and electrode heating and subsequent thermal desorption are a leading cause. Rapid heat-driven thermal desorption of contaminants scales as the square of the current. Therefore, even a modest doubling of drive current would yield an ~ 4X in non-linear surface electrode heating, quickening thermal desorption-based current loss. Exacerbating these physics is a current inability to measure ultra fast heating rates (>20°C/ns), which are paramount to benchmarking and code validation critical to NGPP design – as an empirical approach is not viable. Therefore, Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT) was developed as a new diagnostic for measurement of GHz-scale electrode heating. The discovery of UP-SHOT leveraged expertise in Engineering Science, Material Science, Pulsed-Power, and the Center for Integrated Nanotechnologies. This report includes information on: 1) The preparation of zinc oxide (ZnO) films, characterization, post-deposition treatments 2) Time-resolved photoluminescence at elevated temperatures and thermographic sensitivity
We present a materials study of AlGaInP grown on GaAs leveraging deep-level optical spectroscopy and time resolved photoluminescence. Our materials may serve as the basis for wide-bandgap analogs of silicon photomultipliers optimized for short wavelength sensing.
We present a materials study of AlGaInP grown on GaAs leveraging deep-level optical spectroscopy and time resolved photoluminescence. Our materials may serve as the basis for wide-bandgap analogs of silicon photomultipliers optimized for short wavelength sensing.
