As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
The Roadrunner ion trap is a micro-fabricated surface-electrode ion trap based on silicon technology. This trap has one long linear section and a junction to allow for chain storage and reconfiguration. It uses a symmetric rf-rail design with segmented inner and outer control electrodes and independent control in the junction arms. The trap is fabricated on Sandia’s High Optical Access (HOA) platform to provide good optical access for tightly focused laser beams skimming the trap surface. It is packaged on our custom Bowtie-102 ceramic pin or land grid array packages using a 2.54 mm pitch for backside pins or pads. This trap also includes an rf sensing capacitive divider and tungsten wires for heating or temperature monitoring. The Roadrunner builds on the knowledge gained from previous surface traps fabricated at Sandia while improving ion control capabilities.
We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.
Quantum diamond microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM have been either too complex for us to predict the expected magnetic fields and benchmark the QDM performance or too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system"to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we use a spice electronic circuit simulator and finite-element analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
Surging interest in engineering quantum computers has stimulated significant and focused research on technologies needed to make them manufacturable and scalable. In the ion trap realm this has led to a transition from bulk three-dimensional macro-scale traps to chip-based ion traps and included important demonstrations of passive and active electronics, waveguides, detectors, and other integrated components. At the same time as these technologies are being developed the system sizes are demanding more ions to run noisy intermediate scale quantum (NISQ) algorithms, growing from around ten ions today to potentially a hundred or more in the near future. To realize the size and features needed for this growth, the geometric and material design space of microfabricated ion traps must expand. In this paper we describe present limitations and the approaches needed to overcome them, including how geometric complexity drives the number of metal levels, why routing congestion affects the size and location of shunting capacitors, and how RF power dissipation can limit the size of the trap array. We also give recommendations for future research needed to accommodate the demands of NISQ scale ion traps that are integrated with additional technologies.
Atomic clocks are precision timekeeping devices that form the basis for modern communication and navigation. While many atomic clocks are room-sized systems requiring bulky free space optics and detectors, the Trapped-lon Clock using Technology-On-Chip (TICTOC) project integrates these components into Sandia's existing surface trap technology via waveguides for beam delivery and avalanche photodiodes for light detection. Taking advantage of a multi-ensemble clock interrogation approach, we expect to achieve record time stability (< 1 ns error per year) in a compact (< /1 2 L) clock. Here, we present progress on the development of the integrated devices and recent trapped ion demonstrations.
In this thesis, the construction and implementation of an in situ plasma discharge designed to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results. In recent years, many advances have been made in using ion traps for quantum information processing. All of the criteria defined by DiVincenzo for using ion traps for implementing a quantum computer have been individually demonstrated, and in particular surface traps provide a scalable platform for ions. In order to be used for quantum algorithms, trapped ions need to be cooled to their motional (quantum mechanical) ground state. One of the hurdles in integrating surface ion traps for a quantum computer is minimizing electric field noise, which causes the ion to heat out of its motional ground state and which increases with smaller ion-to-electrode distances realized with surface traps. Surface contamination of trap electrodes is speculated to be the primary source of electric field noise. The main goal achieved by this work was to implement an in situ surface cleaning solution for surface electrode ion traps, which would not modify the ion trap electrode surface metal. Care was taken in applying the RF power in order to localize a plasma near the trap electrodes. A method for characterizing the energy of the plasma ions arriving at the ion trap surface is presented and results for plasma ion energies are shown. Finally, a method for quantifying the effectiveness of plasma cleaning of trap electrodes, using the surface analysis technique of X-ray photoelectron spectroscopy for measuring the amount and kind of surface contaminants, is described. A significant advantage of the trap electrode surface cleaning method presented here is the minimal changes necessary for implementation on a working ion trap experimental system.
This research resulted in a construction and implementation of an in situ plasma discharge to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results.
We will present results of the design, operation, and performance of surface ion micro-traps fabricated at Sandia. Recent progress in the testing of the micro-traps will be highlighted, including successful motional control of ions and the validation of simulations with experiments.
