An interferometric radioimager provides real-time, high-fidelity radioimaging of high voltage breakdown (HVB) both internal and external to electrical components at sub-nanosecond and sub-millimeter resolution and has an ability to resolve multiple/spatially-extensive HVB simultaneously. Therefore, radioimaging can be used to screen for early life weakness/failure and enable non-destructive screening of defective electrical components. In particular, radioimaging can detect precursors to catastrophic HVB, allowing for early detection of weakness in critical electrical components. Radioimaging can also be used to track HVB and pinpoint defects in electrical components real time, including transformers, capacitors, cables, switches, and microelectronics.
We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.