This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.
Variability in energy deposition from stopping ions and LET fluctuations is quantified for specific radiation environments. When compared to predictions using average LET via CREME96, LET fluctuations lead to an order-of-magnitude difference in effective flux and a nearly 4x decrease in predicted soft error rate (SER) in an example calculation performed on a commercial 65 nm SRAM. The large LET fluctuations reported here will be even greater for the smaller sensitive volumes that are characteristic of highly scaled technologies. End-of-range effects of stopping ions do not lead to significant inaccuracies in radiation environments with low solar activity unless the sensitivevolume thickness is 100 μm or greater. In contrast, end-of-range effects for stopping ions lead to significant inaccuracies for sensitive- volume thicknesses less than 10 μm in radiation environments with high solar activity.