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Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Spear, Matthew; Wallace, Trace; Wilson, Donald; Solano, Jose; Irumva, Gedeon; Esqueda, Ivan S.; Barnaby, Hugh J.; Clark, Lawrence T.; Brunhaver, John; Turowski, Marek; Mikkola, Esko; Hughart, David R.; Young, Joshua M.; Manuel, Jack E.; Agarwal, Sapan A.; Vaandrager, Bastiaan L.; Vizkelethy, Gyorgy V.; Gutierrez, Amos; Trippe, James M.; King, Michael P.; Bielejec, Edward S.; Marinella, Matthew J.

Abstract not provided.

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TYPE Conference Poster YEAR 2022
DOIOSTI

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Spear, Matthew; Wallace, Trace; Wilson, Donald; Solano, Jose; Irumva, Gedeon; Esqueda, Ivan S.; Barnaby, Hugh J.; Clark, Lawrence T.; Brunhaver, John; Turowski, Marek; Mikkola, Esko; Hughart, David R.; Young, Joshua M.; Manuel, Jack E.; Agarwal, Sapan A.; Vaandrager, Bastiaan L.; Vizkelethy, Gyorgy V.; King, Michael P.; Marinella, Matthew J.

Abstract not provided.

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TYPE Conference Proceeding YEAR 2022
OSTI

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions with Perpendicular Anisotropy

IEEE Transactions on Nuclear Science

Xiao, Tianyao X.; Bennett, Christopher H.; Mancoff, Frederick B.; Manuel, Jack E.; Hughart, David R.; Jacobs-Gedrim, Robin B.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Sun, Jijun; Aggarwal, Sanjeev; Arghavani, Reza A.; Marinella, Matthew J.

We evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) to displacement damage induced by heavy-ion irradiation. MTJs were exposed to 3-MeV Ta2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to $10^{11}$ ions/cm2, beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque (STT) switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the PMA. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of STT magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

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TYPE Journal Article YEAR 2021
DOIOSTIScopus

Response of GaN-Based Semiconductor Devices to Ion and Gamma Irradiation

Aguirre, Brandon A.; King, Joseph K.; Manuel, Jack E.; Vizkelethy, Gyorgy V.; Bielejec, Edward S.; Griffin, Patrick J.

GaN has electronic properties that make it an excellent material for the next generation of power electronics; however, its radiation hardening still needs further understanding before it is used in radiation environments. In this work we explored the response of commercial InGaN LEDs to two different radiation environments: ion and gamma irradiations. For ion irradiations we performed two types of irradiations at the Ion Beam Lab (IBL) at Sandia National Laboratories (SNL): high energy and end of range (EOR) irradiations. For gamma irradiations we fielded devices at the gamma irradiation facility (GIF) at SNL. The response of the LEDs to radiation was investigated by IV, light output and light output vs frequency measurements. We found that dose levels up to 500 krads do not degrade the electrical properties of the devices and that devices exposed to ion irradiations exhibit a linear and non- linear dependence with fluence for two different ranges of fluence levels. We also performed current injection annealing studies to explore the annealing properties of InGaN LEDs.

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TYPE SAND Report YEAR 2020
DOIOSTI
19 Results
19 Results