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Intrinsic ferroelectricity in Y-doped HfO2 thin films

Nature Materials

Lu, Ping

Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO2-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2 films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm–2 has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm–2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the Pca21 orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO2-based materials, optimizing their performance in device applications.

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TYPE Journal Article YEAR 2022
DOIOSTIScopus

Local invariants identify topology in metals and gapless systems

Physical Review B

Cerjan, Alexander; Loring, Terry A.

Although topological band theory has been used to discover and classify a wide array of novel topological phases in insulating and semimetal systems, it is not well suited to identifying topological phenomena in metallic or gapless systems. Here, we develop a theory of topological metals based on the system's spectral localizer and associated Clifford pseudospectrum, which can both determine whether a system exhibits boundary-localized states despite the presence of degenerate bulk bands and provide a measure of these states' topological protection even in the absence of a bulk band gap. We demonstrate the generality of this method across symmetry classes in two lattice systems, a Chern metal and a higher-order topological metal, and prove the topology of these systems is robust to relatively strong perturbations. The ability to define invariants for metallic and gapless systems allows for the possibility of finding topological phenomena in a broad range of natural, photonic, and other artificial materials that could not be previously explored.

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TYPE Journal Article YEAR 2022
DOIOSTIScopus
Results 5876–5900 of 99,299
Results 5876–5900 of 99,299