The dynamics of the gold–silicon eutectic reaction in limited dimensions were studied using in situ transmission electron microscopy and scanning transmission electron microscopy heating experiments. The phase transformation, viewed in both plan-view and cross-section of the film, occurs through a complex combination of dislocation and grain boundary motion and diffusion of silicon along gold grain boundaries, which results in a dramatic change in the microstructure of the film. The conversion observed in cross-section shows that the eutectic mixture forms at the Au–Si interface and proceeds into the Au film at a discontinuous growth rate. This complex process can lead to a variety of microstructures depending on sample geometry, heating temperature, and the ratio of gold to silicon which was found to have the largest impact on the eutectic microstructure. The eutectic morphology varied from dendrites to hollow rectangular structures to Au–Si eutectic agglomerates with increasing silicon to gold ratio. Graphical abstract: [Figure not available: see fulltext.]
Recently, the study of topological structures in photonics has garnered significant interest, as these systems can realize robust, nonreciprocal chiral edge states and cavity-like confined states that have applications in both linear and nonlinear devices. However, current band theoretic approaches to understanding topology in photonic systems yield fundamental limitations on the classes of structures that can be studied. Here, we develop a theoretical framework for assessing a photonic structure’s topology directly from its effective Hamiltonian and position operators, as expressed in real space, and without the need to calculate the system’s Bloch eigenstates or band structure. Using this framework, we show that nontrivial topology, and associated boundary-localized chiral resonances, can manifest in photonic crystals with broken time-reversal symmetry that lack a complete band gap, a result that may have implications for new topological laser designs. Finally, we use our operator-based framework to develop a novel class of invariants for topology stemming from a system’s crystalline symmetries, which allows for the prediction of robust localized states for creating waveguides and cavities.
Dr. Fitzgerald, a postdoc at Sandia National Laboratories, works in a materials of mechanics group characterizing material properties of ductile materials. Her presentation focuses specifically on increasing throughput of coefficient of thermal expansion (CTE) measurements with the use of optical strain measurements, called digital image correlation (DIC). Currently, the coefficient of thermal expansion is found through a time intensive process called dilatometry. There are multiple types of dilatometers. One type, a double push rod mechanical dilatometer, uses and LVDT to measure the expansion of a specimen in one direction. It uses a reference material with known properties to determine the CTE of the specimen in question. Testing about 500 samples using the double push rod mechanical dilatometer would take about 2 years if testing Monday through Friday, because the reference material needs to be at a constant temperature and heating must done slowly to ensure no thermal gradients across the rod. A second type, scissors type dilatometer, pinches a sample using a “scissor-like” appendage that also uses a LVDT to measure thermal expansion as the sample is heated. Finally, laser dilatometry, was created to provide a non-contact means to measure thermal expansion. This process greatly reduces the time required to setup a measurement but is still only able to measure one sample at a time. The time required to test 500 samples gets reduced to 3.5 weeks. Additionally, to measure expansion in different directions, multiple lasers must be used. Dr. Fitzgerald solved this conundrum by using an optical measurement technique called digital image correlation to create strain maps in multiple orientations as well as measuring multiple samples at once. Using this technique, Dr. Fitzgerald can test 500 samples, conservatively, in 2 days.
On July 11, 2022, Sandia National Laboratories in California (SNL/CA) submitted a Response to Regional Water Quality Control Board Comments on Soil Sampling Results for Closure of a Portion of SWMU #16 in response to the February 16,2022 San Francisco Bay Regional Water Quality Control Board’s (SFRWQCB) letter requesting supporting information for the recommended closure of 7,700 linear feet of abandoned sewer lines. On August 18, 2022, SFRWQCB further requested a Sampling and Analysis Plan (SAP) for additional “step-out” sampling to delineate the potential presence of benzidine near borehole BH-056, which is located near the former sewer line. SNL/CA is in the process of contracting Weiss Associates (Weiss) to perform and oversee the boring, sampling, analysis, and report development to determine the potential presence and extent of benzidine. This document outlines the work that is anticipated, including the development of the SAP, to complete the investigation and submit a final report to the SFRWQCB. The work proposed by Weiss provides an estimated schedule for completing the investigation and developing the addendum Part II SAP for the project. In addition, Weiss provided a preliminary estimate of the sample locations (see Attachment A) which serve as addendum Part I of the SAP requested by the SFRWQCB. The contractor will submit the addendum Part II SAP, to satisfy the SFRWQCB requirement, before proceeding with any work.
We have demonstrated focused ion implantation for fabrication of single atom devices and nanofabrication. This is a viable solution for prototyping - fast and easy! There is on-going work in diamond, SiN, SiC, hBN, GaN, AlGan, etc. A new liquid metal alloy ion source development is on-going. There is a pathway towards deterministic defect centers in wide bandgap materials using FIB implantation.
This report describes research and development (R&D) activities conducted during Fiscal Year 2022 (FY22) specifically related to the Engineered Barrier System (EBS) R&D Work Package in the Spent Fuel Waste Science and Technology (SFWST) Campaign supported by the United States (U.S.) Department of Energy (DOE). The R&D activities focus on understanding EBS component evolution and interactions within the EBS, as well as interactions between the host media and the EBS. The R&D team represented in this report consists of individuals from Sandia National Laboratories, Lawrence Berkeley National Laboratory (LBNL), Los Alamos National Laboratory (LANL), and Vanderbilt University. EBS R&D work also leverages international collaborations to ensure that the DOE program is active and abreast of the latest advances in nuclear waste disposal.
High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. In this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m−1 K−1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.
This report represents the 1st shot (in a series of 8) conducted on September 15, 2022. One 10 lb C4 charge (along with ~200g of Potassium Bromide (KBr)) was detonated inside 9920 North Pad Boom Box. Noise sampling was performed at several points on Site 9920 to characterize the noise mitigation provided by the block structure. This data will help inform safe locations for Members of the Workforce (MOWs) to be located during future testing with similar net explosive weights. During the test, all MOW/site visitors were bunkered inside Building 9926/Mobile Firing Control Point (MFCP) to prevent personnel exposure to any hazards associated with the testing
The purpose of this sampling event was to determine if the observation point (inside the MFCP) could be relocated from 74 feet away to 21 feet from ground zero and to determine how much attenuation is provided by the MFCP. The MFCP provides noise attenuation to ensure Members of the Workforce (MOW) exposure to impact noise is below the Occupational Exposure Limit (OEL) of 140 dBC. The MFCP will be used for future tests under similar configurations. Please note that during each test shot, MOW was located inside MFCP that was 74 feet from ground zero and donned hearing protection (e.g., ear plugs with a minimum noise reduction rating of 23).
This manual describes the use of the Xyce™ Parallel Electronic Simulator. Xyce™ has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: (1) Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. (2) A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. (3) Device models that are specifically tailored to meet Sandia's needs, including some radiation-aware devices (for Sandia users only). (4) Object-oriented code design and implementation using modern coding practices. Xyce™ is a parallel code in the most general sense of the phrase—a message passing parallel implementation—which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel eficiency is achieved as the number of processors grows.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice, HSPICE, and Spectre netlists into Xyce™ netlists.
This document is a reference guide to the Xyce™ Parallel Electronic Simulator, and is a companion document to the Xyce™ Users' Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce™. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce™ Users' Guide.