In this project, we demonstrated stable nanoscale fracture in single-crystal silicon using an in-situ wedge-loaded double cantilever beam (DCB) specimen. The fracture toughness KIC was calculated directly from instrumented measurement of force and displacement via finite element analysis with frictional corrections. Measurements on multiple test specimens were used to show KIC = 0.72 ± 0.07 MPa m1/2 on {111} planes and observe the crack-growth resistance curve in <500 nm increments. The exquisite stability of crack growth, instrumented measurement of material response, and direct visual access to observe nanoscale fracture processes in an ideally brittle material differentiate this approach from prior DCB methods.
Product designs from a wide range of industries such as aerospace, automotive, biomedical, and others can benefit from new metamaterials for mechanical energy dissipation. In this study, we explore a novel new class of metamaterials with unit cells that absorb energy via sliding Coulombic friction. Remarkably, even materials such as metals and ceramics, which typically have no intrinsic reversible energy dissipation, can be architected to provide dissipation akin to elastomers. The concept is demonstrated at different scales (centimeter to micrometer), with different materials (metal and polymer), and in different operating environments (high and low temperatures), all showing substantial dissipative improvements over conventional non-contacting lattice unit cells. Further, as with other ‘programmable’ metamaterials, the degree of Coulombic absorption can be tailored for a given application. An analytic expression is derived to allow rapid first-order optimization. This new class of Coulombic friction energy absorbers can apply broadly to many industrial sectors such as transportation (e.g. monolithic shock absorbers), biomedical (e.g. prosthetics), athletic equipment (e.g. skis, bicycles, etc.), defense (e.g. vibration tolerant structures), and energy (e.g. survivable electrical grid components).
A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where there are both lattice and thermal mismatches. Here, we report the selective area growth (SAG) of thick GaN on Si and on the newly available Qromis Substrate Technology™ (QST) substrates that lead to a significant reduction of the defect densities to a level that is nearly comparable to that on native substrates by defect annihilation. We performed a parametric study of the electrical properties of the SAG GaN layers by fabricating and characterizing Schottky barrier diodes for SAG GaN layer thicknesses of 5, 10, 15, and 20 μm for GaN-on-Si, GaN-on-QST, and GaN-on-GaN diodes. While thicker layers led to a significant reduction in defect densities and improvement in the diode forward current characteristics, the GaN-on-QST diodes exhibited nearly similar characteristics to the GaN-on-GaN diodes. Further improvement in the device structure and/or SAG growth for GaN-on-Si is needed to achieve a comparable performance as the defect densities in the GaN-on-Si are comparable to that of GaN-on-QST substrates.
Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. Here, we report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. In this study, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.