Publications

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InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z∼0.38) IL is ∼1-2 nm thick, and is grown after and at the same growth temperature as the ∼3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ∼10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to ∼0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing nonradiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

Charge compensation in rare-earth Praseodymium (Pr3+) doped SrTiO3 plays an important role in determining the overall photoluminescence properties of the system. Here, the Pr3+ doping behavior in SrTiO3 grain boundaries (GBs) is analyzed using aberration corrected scanning transmission electron microscopy. The presence of Pr3+ induces structural variations and changes the statistical prevalence of the GB structures. In contrast to the assumption that Pr3+ substitutes on the Sr site in the bulk, Pr3+ is found to substitute on both Sr and Ti sites inside the GBs, with the highest concentration at the Ti sites. This amphoteric doping behavior in the boundary plane is further confirmed by first principles theoretical calculations.

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This work has started the process of extending nanometer-scale comprehensive microanalysis to the 3rd dimension by combining full x-ray spectral imaging with previously developed computed tomography techniques whereby we acquire a series of spectral images for a large number of projections of the same specimen in the transmission electron microscope and then analyze the composite computed tomographic spectral image data prior to application of existing tomographic reconstruction software. We have demonstrated a needle-shaped specimen geometry (shape/size and preparation method) by focused ion beam preparation and acquisition and analysis of a complete tomographic spectral image on a test material consisting of fine-grained Ni with sub-10 nm alumina particles.

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The ability to integrate ceramics with other materials has been limited due to high temperature (>800°C) ceramic processing. Recently, researchers demonstrated a novel process, aerosol deposition (AD), to fabricate ceramic films at room temperature (RT). In this process, sub-micron sized ceramic particles are accelerated by pressurized gas, impacted on the substrate, plastically deformed, and form a dense film under vacuum. This AD process eliminates high temperature processing thereby enabling new coatings and device integration, in which ceramics can be deposited on metals, plastics, and glass. However, knowledge in fundamental mechanisms for ceramic particles to deform and form a dense ceramic film is still needed and is essential in advancing this novel RT technology. In this work, a combination of experimentation and atomistic simulation was used to determine the deformation behavior of sub-micron sized ceramic particles; this is the first fundamental step needed to explain coating formation in the AD process. High purity, single crystal, alpha alumina particles with nominal sizes of 0.3 µm and 3.0 µm were examined. Particle characterization, using transmission electron microscopy (TEM), showed that the 0.3 µm particles were relatively defect-free single crystals whereas 3.0 µm particles were highly defective single crystals or particles contained low angle grain boundaries. Sub-micron sized Al₂O₃ particles exhibited ductile failure in compression. In situ compression experiments showed 0.3µm particles deformed plastically, fractured, and became polycrystalline. Moreover, dislocation activity was observed within these particles during compression. These sub-micron sized Al₂O₃ particles exhibited large accumulated strain (2-3 times those of micron-sized particles) before first fracture. In agreement with the findings from experimentation, atomistic simulations of nano-Al₂O₃ particles showed dislocation slip and significant plastic deformation during compression. On the other hand, the micron sized Al₂O₃ particles exhibited brittle fracture in compression. In situ compression experiments showed 3µm Al₂O₃ particles fractured into pieces without observable plastic deformation in compression. Particle deformation behaviors will be used to inform Al₂O₃ coating deposition parameters and particle-particle bonding in the consolidated Al₂O₃ coatings.

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