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Low-temperature silicon epitaxy for atomic precision devices

ECS Transactions

Anderson, Evan M.; Katzenmeyer, Aaron M.; Luk, Ting S.; Campbell, Deanna M.; Marshall, Michael; Bussmann, Ezra; Ohlhausen, J.A.; Lu, Ping; Kotula, Paul G.; Ward, Daniel R.; Lu, Tzu M.; Misra, Shashank

We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

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Results 26–33 of 33
Results 26–33 of 33