Publications

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This article describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high- (Formula presented.) SiN cavity.

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Metals subjected to irradiation environments undergo microstructural evolution and concomitant degradation, yet the nanoscale mechanisms for such evolution remain elusive. Here, we combine in situ heavy ion irradiation, atomic resolution microscopy, and atomistic simulation to elucidate how radiation damage and interfacial defects interplay to control grain boundary (GB) motion. While classical notions of boundary evolution under irradiation rest on simple ideas of curvature-driven motion, the reality is far more complex. Focusing on an ion-irradiated Pt Σ3 GB, we show how this boundary evolves by the motion of 120° facet junctions separating nanoscale {112} facets. Our analysis considers the short- and mid-range ion interactions, which roughen the facets and induce local motion, and longer-range interactions associated with interfacial disconnections, which accommodate the intergranular misorientation. We suggest how climb of these disconnections could drive coordinated facet junction motion. These findings emphasize that both local and longer-range, collective interactions are important to understanding irradiation-induced interfacial evolution.

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Errors in quantum logic gates are usually modeled by quantum process matrices (CPTP maps). But process matrices can be opaque and unwieldy. We show how to transform the process matrix of a gate into an error generator that represents the same information more usefully. We construct a basis of simple and physically intuitive elementary error generators, classify them, and show how to represent the error generator of any gate as a mixture of elementary error generators with various rates. Finally, we show how to build a large variety of reduced models for gate errors by combining elementary error generators and/or entire subsectors of generator space. We conclude with a few examples of reduced models, including one with just 9N2 parameters that describes almost all commonly predicted errors on an N-qubit processor.

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