Recent interest in topological quantum computing has driven research into topological nanowires, one-dimensional quantum wires that support topological modes, including Majorana fermions. Most topological nanowire designs rely on materials with strong spin-orbit coupling, such as InAs or InSb, used in combination with superconductors. It would be advantageous to fabricate topological nanowires with Si owing to its mature technology. However, the intrinsic spin-orbit coupling in Si is weak. One approach that could circumvent this material deficiency is to rotate the electron spins with nanomagnets. Here we perform detailed simulations of realistic Si/SiGe systems with an artificial spin-orbit gap induced by a nanomagnet array. Most of our results are generalizable to other nanomagnet-based topological nanowire designs. By studying several concrete examples, we gain insight into the effects of nanomagnet arrays, leading to design rules and guidelines. In particular, we develop a recipe for eliminating unwanted gaps that result from realistic nanomagnet designs. Finally, we present an experimentally realizable design using magnets with a single polarization.
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than ∼6 × 1011 cm-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.
Here we present the development of a Zeptocalorimeter. The motivation for designing and implementing such a device is driven, ultimately, by its anticipated exceptional sensitivity (10-21 J/K, at 2K). Such a device would be highly valuable in detecting minute quantities of mass for threat detection, studying fundamental phonon physics, and detecting energetic dissipation events at the attojoule level. To date, the most sensitive calorimeter demonstrated in the literature at 2K has been developed by the Roukes group at Caltech, where they achieved an addendum heat capacity of 10-15 J/K with a 1/1000 sensitivity to external stimuli. To obtain such a low value of heat capacity requires a very small thermal mass, and thus, one of the greatest challenges in this project is the fabrication of this device, which requires numerous precision nanofabrication techniques. Furthermore, the heat capacity measurement of this device, as performed from room temperature to cryogenic temperatures, is equally challenging, as the transient signals used to determine the platform's thermal time constant require careful attention to the mitigation of feedthrough capacitance and delicate amplifier offsets. In this report we describe in detail the fabrication process flow for developing the calorimeter, including the layout and device design for obtaining a single lumped RC thermal resistance and capacitance, so that the device can be used for quantitative measurements of nanoscale materials with a suitable thermal link. The measurement method and experimental setup are also given, where we explain the heater and thermometer calibration methods, the thermal resistance measurements, the transient measurements, and lastly the cryogenic setup with intermediate frequency cabling and the thermal sinking of those lines.
Holes in germanium-rich heterostructures provide a compelling alternative for achieving spin based qubits compared to traditional approaches such as electrons in silicon. In this project, we addressed the question of whether holes in Ge/SiGe quantum wells can be confined into laterally defined quantum dots and made into qubits. Through this effort, we successfully fabricated and operated single-metal-layer quantum dot devices in Ge/SiGe in multiple devices. For single quantum dots, we measured the capacitances of the quantum dot to the surface electrodes and find that they reasonably compare to expected values based on the electrode dimensions, suggested that we have formed a lithographic quantum dot. We also compare the results to detailed self-consistent calculations of the expected potential. Finally, we demonstrate, for the first time, a double quantum dot in the Ge/SiGe material system.
Physically unclonable functions are physical entities or devices that generate unique, unpredictable responses to inputs. They are important in many security applications, including encryption, authentication, anti-counterfeiting, etc. Physical unclonable functions are based on the unavoidable randomness in the manufacturing processes and are impossible to duplicate, even by the original manufacturer. In this project, we studied the feasibility of using hardened SmCo nanomagnets as the physical implementation of physically unclonable functions. Hardened SmCo nano-magnets were fabricated through a lift-off process as well as an etch-back process. The magnetization of these nano-magnets was mapped out as a function of shapes, dimensions, and processing conditions, using magnetic force microscopy. A systematic, uncontrolled bias in the polarity was identified. Attempts to mitigate this bias were made but were unsuccessful. Nevertheless, we found in the process that blanket SmCo films themselves may serve as the desired physically unclonable functions.
There has been much interest in leveraging the topological order of materials for quantum information processing. Among the various solid-state systems, one-dimensional topological superconductors made out of strongly spin-orbit-coupled nanowires have been shown to be the most promising material platform. In this project, we investigated the feasibility of turning silicon, which is a non-topological semiconductor and has weak spin-orbit coupling, into a one-dimensional topological superconductor. Our theoretical analysis showed that it is indeed possible to create a sizable effective spin-orbit gap in the energy spectrum of a ballistic one-dimensional electron channel in silicon with the help of nano-magnet arrays. Experimentally, we developed magnetic materials needed for fabricating such nano-magnets, characterized the magnetic behavior at low temperatures, and successfully demonstrated the required magnetization configuration for opening the spin-orbit gap. Our results pave the way toward a practical topological quantum computing platform using silicon, one of the most technologically mature electronic materials.
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T≤800 ° C process to prepare clean Si0.86Ge0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T=0.3 K show that the doped heterostructure has R□=570±30Ω, yielding an electron density ne=2.1±0.1×1014cm-2 and mobility μe=52±3cm2V-1s-1, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μe and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.
Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.