Publications

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As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T≤800 ° C process to prepare clean Si0.86Ge0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T=0.3 K show that the doped heterostructure has R□=570±30Ω, yielding an electron density ne=2.1±0.1×1014cm-2 and mobility μe=52±3cm2V-1s-1, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μe and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

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Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 1010 cm-2, this ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (g_ip) can be vanishingly small while the perpendicular g factor (g_z) can be much larger than 2. Here we report the measurement of g_ip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

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This the final report of the LDRD project entitled "Realizing the Power of Near-Term Quantum Technologies", which was tasked with laying a theoretical foundation and computational framework for quantum simulation on quantum devices, to support both future Sandia efforts and the broader academic research effort in this area. The unifying theme of the project has been the desire to delineate more clearly the interface between existent classical computing resources that are vast and reliable with emerging quantum computing resources that will be scarce and unreliable for the foreseeable future. We seek to utilize classical computing resources to judge the efficacy of quantum devices for quantum simulation tasks and determine when they exceed the performance of classical devices, thereby achieving "quantum supremacy". This task was initially pursued by adapting the general concept of "parameter space compression" to quantum simulation. An inability to scale this analysis efficiently to large-scale simulations precipitated a shift in focus to assessing quantum supremacy of a specific quantum device, a 1D Bose gas trapped in an optical lattice, that was more amenable to large-scale analysis. We also seek to reconstruct unobserved information from limited observations of a quantum device to enhance their utility. This task was initially pursued as an application of maximum entropy reconstruction. Initial attempts to improve entropy approximations for direct reconstruction by free energy minimization proved to be more difficult than expected, and the focus shifted to the development of a quantum thermostat to facilitate indirect reconstruction by evolving a quantum Markov process. An efficient quantum thermostat is broadly useful for quantum state preparation in almost any quantum simulation task. In the middle of the project, a small opportunistic investment was made in a high-risk experiment to build an analog quantum simulator out of hole quantum dots in Ge/SiGe heterostructures. While a useful simulator was not produced, hole quantum dots at a Ge/SiGe interface have been successfully observed for the first time.

We report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ∼13 to ∼28, are observed in the density range of 1.4×1010 cm-2- 1.4×1011 cm-2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ∼1.3-1.4, is measured in the density range of 1.5×1010 cm-2- 2×1010 cm-2. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.

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