Publications

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Transient responses of high-Q nano-optomechanical modes are characterized with Interleaved-ASOPS, where pump-induced transients are interrogated with multiple probe pulses. Temporal resolution increases linearly with probe-pulse-number beyond conventional ASOPS, achieving sub-ps resolution over μs durations.

We present the first time-domain measurement of a guided-wave nano-opto-mechanical system, resulting in the coherent excitation of multiple mechanical modes. We deconvolved the electronic and mechanical responses to observe the evolution of the coherent superposition. © 2014 OSA.

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Transient responses of high-Q nano-optomechanical modes are characterized with Interleaved-ASOPS, where pump-induced transients are interrogated with multiple probe pulses. Temporal resolution increases linearly with probe-pulse-number beyond conventional ASOPS, achieving sub-ps resolution over μs durations.

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This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

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This paper presents a novel 3D structured ASIC platform that lowers the development effort required to deploy 3D integration technologies in cost sensitive, low-volume applications. The key advantage of this structured 3D ASIC architecture, over custom 3D ASICs, is a fixed vertical interconnect pattern that is programmed by a single 2D metal-via mask, allowing individual die levels to be rapidly designed, fabricated, and assembled. The first silicon realization of this architecture is a 3D-stackable 12×12mm structured ASIC die with 42K interconnects, which is resource compatible with an existing 2D structured ASIC device of the same size. 3D die stacks built using this platform are also intended to be a less costly and more flexible replacement for a large 20×20mm monolithically integrated structured ASIC device. This 3D structured ASIC platform was des igned and fabricated in Sandia's 0.35-μm foundry, and high-density front-end-of-line through silicon vias (TSVs) were developed to implement the 3D vertical interconnects.1 © 2013 IEEE.

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We examine the long-wave infrared (LWIR) optical characteristics of heavily-doped silicon and explore engineering of surface plasmons polaritons (SPP) in this spectral region. Both phosphorus (n-type Si) and boron (p-type Si) implants are evaluated and various cap layers and thermal annealing steps are examined. The optical properties are measured using ellipsometry and fit to a Drude model for the infrared (IR) permittivity. The predicted metallic behavior for Si in the thermal IR and its impact on the spatial confinement and dispersion for surface plasmons is studied. We find that the transverse spatial confinement for a surface plasmon on highly doped Si is strongly sub-wavelength near the plasma edge, and the confinement to the surface is enhanced to greater than 10 × that of the metal confined SPP over the entire LWIR spectrum. © 2011 American Institute of Physics.

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