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High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch

Baker, Michael S.; Pohl, Kenneth R.

Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's over a period of 1.5 ms. For the second test the MEMS devices were assembled in a gun-fired penetrator and shot into a cement target at the Army Waterways Experiment Station in Vicksburg Mississippi. This test resulted in a peak acceleration of 7191 g's for a duration of 5.5 ms. The MEMS devices were instrumented using the MEMS Diagnostic Extraction System (MDES), which is capable of driving the devices and recording the device output data during the high-g event, providing in-flight data to assess the device performance. A total of six devices were monitored during the experiments, four mechanical non-volatile memory devices (MNVM) and two Silicon Reentry Switches (SiRES). All six devices functioned properly before, during, and after each high-g test without a single failure. This is the first known test under flight conditions of an active, powered MEMS device at Sandia.

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Si-based RF MEMS components

Dyck, Christopher; Stewart, Harold D.; Fleming, J.G.; Stevens, James E.; Baker, Michael S.; Nordquist, Christopher D.

Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

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Final report : compliant thermo-mechanical MEMS actuators, LDRD #52553

Baker, Michael S.; Plass, Richard A.; Headley, Thomas J.; Walraven, Jeremy

Thermal actuators have proven to be a robust actuation method in surface-micromachined MEMS processes. Their higher output force and lower input voltage make them an attractive alternative to more traditional electrostatic actuation methods. A predictive model of thermal actuator behavior has been developed and validated that can be used as a design tool to customize the performance of an actuator to a specific application. This tool has also been used to better understand thermal actuator reliability by comparing the maximum actuator temperature to the measured lifetime. Modeling thermal actuator behavior requires the use of two sequentially coupled models, the first to predict the temperature increase of the actuator due to the applied current and the second to model the mechanical response of the structure due to the increase in temperature. These two models have been developed using Matlab for the thermal response and ANSYS for the structural response. Both models have been shown to agree well with experimental data. In a parallel effort, the reliability and failure mechanisms of thermal actuators have been studied. Their response to electrical overstress and electrostatic discharge has been measured and a study has been performed to determine actuator lifetime at various temperatures and operating conditions. The results from this study have been used to determine a maximum reliable operating temperature that, when used in conjunction with the predictive model, enables us to design in reliability and customize the performance of an actuator at the design stage.

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MEMS conformal electrode array for retinal implant

Stein, David J.; Okandan, Murat; Wessendorf, Kurt O.; Christenson, Todd R.; Lemp, Thomas; Shul, Randy J.; Baker, Michael S.; James, Conrad D.; Myers, Ramona L.

Retinal prosthesis projects around the world have been pursuing a functional replacement system for patients with retinal degeneration. In this paper, the concept for a micromachined conformal electrode array is outlined. Individual electrodes are designed to float on micromachined springs on a substrate that will enable the adjustment of spring constants-and therefore contact force-by adjusting the dimensions of the springs at each electrode. This also allows the accommodation of the varying curvature/topography of the retina. We believe that this approach provides several advantages by improving the electrode/tissue interface as well as generating some new options for in-situ measurements and overall system design.

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Microdiagnostic Lab on a Chip - LDRD Final Report

De Boer, Maarten P.; Smith, Norman F.; Sinclair, Michael B.; Baker, Michael S.; Bitsie, Fernando

Polycrystalline silicon (polysilicon) surface micromachining is a new technology for building micrometer ({micro}m) scale mechanical devices on silicon wafers using techniques and process tools borrowed from the manufacture of integrated circuits. Sandia National Laboratories has invested a significant effort in demonstrating the viability of polysilicon surface micromachining and has developed the Sandia Ultraplanar Micromachining Technology (SUMMiT V{trademark} ) process, which consists of five structural levels of polysilicon. A major advantage of polysilicon surface micromachining over other micromachining methods is that thousands to millions of thin film mechanical devices can be built on multiple wafers in a single fabrication lot and will operate without post-processing assembly. However, if thin film mechanical or surface properties do not lie within certain tightly set bounds, micromachined devices will fail and yield will be low. This results in high fabrication costs to attain a certain number of working devices. An important factor in determining the yield of devices in this parallel-processing method is the uniformity of these properties across a wafer and from wafer to wafer. No metrology tool exists that can routinely and accurately quantify such properties. Such a tool would enable micromachining process engineers to understand trends and thereby improve yield of micromachined devices. In this LDRD project, we demonstrated the feasibility of and made significant progress towards automatically mapping mechanical and surface properties of thin films across a wafer. The MEMS parametrics measurement team has implemented a subset of this platform, and approximately 30 wafer lots have been characterized. While more remains to be done to achieve routine characterization of all these properties, we have demonstrated the essential technologies. These include: (1) well-understood test structures fabricated side-by-side with MEMS devices, (2) well-developed analysis methods, (3) new metrologies (i.e., long working distance interferometry) and (4) a hardware/software platform that integrates (1), (2) and (3). In this report, we summarize the major focus areas of our LDRD project. We describe the contents of several articles that provide the details of our approach. We also describe hardware and software innovations we made to realize a fully automatic wafer prober system for MEMS mechanical and surface property characterization across wafers and from wafer-lot to wafer-lot.

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Results 26–38 of 38
Results 26–38 of 38