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Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Lohn, Andrew J.; Decker, Seth; Doyle, B.L.; Mickel, Patrick R.; Marinella, Matthew

A major class of resistive memory devices is based on transition metal oxides, where mobile oxygen vacancies allow these devices to exhibit multiple resistance states. Ta2O5 based devices in particular have recently demonstrated impressive endurance and forming-free results. Deposition of substoichiometric Ta2Ox (x < 5) films is a critical process in order to produce the required oxygen vacancies in these devices. This paper describes a physical vapor deposition (PVD) reactive sputtering process to deposit substoichiometric Ta2Ox films. The desired film stoichiometry is achieved by feedback control of the oxygen partial pressure in the PVD chamber. A calibration procedure based on Rutherford backscattering spectroscopy is described for locating the optimum oxygen partial pressure.

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TYPE Journal Article YEAR 2014
OSTIScopus

Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

ECS Transactions

Yates, B.R.; Darby, B.L.; Petersen, D.H.; Hansen, O.; Lin, R.; Nielsen, P.F.; Doyle, B.L.; Kontos, A.; Jones, K.S.

The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.

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TYPE Conference YEAR 2013
ScopusOSTI
Results 76–100 of 191
Results 76–100 of 191