Publications

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The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDs into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.

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Improved validation for models of complex systems has been a primary focus over the past year for the Resilience in Complex Systems Research Challenge. This document describes a set of research directions that are the result of distilling those ideas into three categories of research -- epistemic uncertainty, strong tests, and value of information. The content of this document can be used to transmit valuable information to future research activities, update the Resilience in Complex Systems Research Challenge's roadmap, inform the upcoming FY18 Laboratory Directed Research and Development (LDRD) call and research proposals, and facilitate collaborations between Sandia and external organizations. The recommended research directions can provide topics for collaborative research, development of proposals, workshops, and other opportunities.

On August 15, 2016, Sandia hosted a visit by Professor Venkatesh Narayanamurti. Prof Narayanamurti (Benjamin Peirce Research Professor of Technology and Public Policy at Harvard, Board Member of the Belfer Center for Science and International Affairs, former Dean of the School of Engineering and Applied Science at Harvard, former Dean of Engineering at UC Santa Barbara, and former Vice President of Division 1000 at Sandia). During the visit, a small, informal, all-day idea exploration session on "Towards an Engineering and Applied Science of Research" was conducted. This document is a brief synopsis or "footprint" of the presentations and discussions at this Idea Exploration Session. The intent of this document is to stimulate further discussion about pathways Sandia can take to improve its Research practices.

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Wide band gap semiconductors like AlN typically cannot be efficiently p-doped: acceptor levels are far from the valence band-edge, preventing holes from activating. This means that pn-junctions cannot be created, and the semiconductor is less useful, a particular problem for deep Ultraviolet (UV) optoelectronics.

This report contains the written footprint of a Sandia-hosted workshop held in Albuquerque, New Mexico, June 22-23, 2016 on “Complex Systems Models and Their Applications: Towards a New Science of Verification, Validation and Uncertainty Quantification,” as well as of pre-work that fed into the workshop. The workshop’s intent was to explore and begin articulating research opportunities at the intersection between two important Sandia communities: the complex systems (CS) modeling community, and the verification, validation and uncertainty quantification (VVUQ) community The overarching research opportunity (and challenge) that we ultimately hope to address is: how can we quantify the credibility of knowledge gained from complex systems models, knowledge that is often incomplete and interim, but will nonetheless be used, sometimes in real-time, by decision makers?

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III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solid-state lighting. (Figure presented.) .

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Research, the manufacture of knowledge, is currently practiced largely as an “art,” not a “science.” Just as science (understanding) and technology (tools) have revolutionized the manufacture of other goods and services, it is natural, perhaps inevitable, that they will ultimately also be applied to the manufacture of knowledge. In this article, we present an emerging perspective on opportunities for such application, at three different levels of the research enterprise. At the cognitive science level of the individual researcher, opportunities include: overcoming idea fixation and sloppy thinking, and balancing divergent and convergent thinking. At the social network level of the research team, opportunities include: overcoming strong links and groupthink, and optimally distributing divergent and convergent thinking between individuals and teams. At the research ecosystem level of the research institution and the larger national and international community of researchers, opportunities include: overcoming GPA and performance fixation, overcoming narrow measures of research impact, and overcoming (or harnessing) existential/social stress.

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Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.

Research, the manufacture of knowledge, is currently practiced largely as an “art,” not a “science.” Just as science (understanding) and technology (tools) have revolutionized the manufacture of other goods and services, it is natural, perhaps inevitable, that they will ultimately also be applied to the manufacture of knowledge. In this article, we present an emerging perspective on opportunities for such application, at three different levels of the research enterprise. At the cognitive science level of the individual researcher, opportunities include: overcoming idea fixation and sloppy thinking, and balancing divergent and convergent thinking. At the social network level of the research team, opportunities include: overcoming strong links and groupthink, and optimally distributing divergent and convergent thinking between individuals and teams. At the research ecosystem level of the research institution and the larger national and international community of researchers, opportunities include: overcoming performance fixation, overcoming narrow measures of research impact, and overcoming (or harnessing) existential/social stress.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

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