Research, the manufacture of knowledge, is currently practiced largely as an “art,” not a “science.” Just as science (understanding) and technology (tools) have revolutionized the manufacture of other goods and services, it is natural, perhaps inevitable, that they will ultimately also be applied to the manufacture of knowledge. In this article, we present an emerging perspective on opportunities for such application, at three different levels of the research enterprise. At the cognitive science level of the individual researcher, opportunities include: overcoming idea fixation and sloppy thinking, and balancing divergent and convergent thinking. At the social network level of the research team, opportunities include: overcoming strong links and groupthink, and optimally distributing divergent and convergent thinking between individuals and teams. At the research ecosystem level of the research institution and the larger national and international community of researchers, opportunities include: overcoming performance fixation, overcoming narrow measures of research impact, and overcoming (or harnessing) existential/social stress.
Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.
Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.
Odumosu, T.B.; Tsao, Jeffrey Y.; Crabtree, G.W.; Narayanamurti, V.
The verdict is in: the methods of science can significantly enhance the effectiveness of creative teams. Just ask employers like Google and Facebook who are applying ideas from the social sciences to improve the performance of their organizations.1 Over the last few decades, social scientists, including psychologists, sociologists and anthropologists, have made important strides in developing a scientific understanding of how creative individuals and creative communities operate.
The authors, Jeffrey Y. Tsao, Jung Han, Roland H. Haitz, and P. Morgan Pattison, on behalf of a large and growing community of scientists and technologists working in III-N semiconductor materials, physics and devices, and of users of the applications they enable congratulate Professors Akasaki, Amano and Nakamura (AAN). The path that connects scientific understanding with tools and technologies is rarely linear. Prevailing scientific understanding often enables and unleashes new tools and technologies. But prevailing scientific understanding is imperfect, and technology researchers must often step, as did AAN, outside its confines for their breakthroughs. the importance of technology breakthroughs is particularly evident in semiconductors: in recent decades, more and more Physics Nobel Prizes have been awarded for technology breakthroughs, and of these by far the most have been for semiconductors.
We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately the self-limiting etch kinetics lead to an ensemble of nanoparticles. This change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.
III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.
