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InAs nonlinear metalens for focused terahertz pulse generation

CLEO: Science and Innovations, CLEO: S and I 2024 in Proceedings CLEO 2024, Part of Conference on Lasers and Electro-Optics

Jung, Hyunseung; Addamane, Sadhvikas J.; Luk, Ting S.; Harris, Charles T.; Subramania, Ganapathi S.; Brener, Igal; Mitrofanov, Oleg

We demonstrate an InAs-based terahertz (THz) metasurface emitter that can generate and focus THz pulses using a binary-phase Fresnel zone plate concept. The metalens emitter successfully generates a focused THz beam without additional THz optics.

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Metrics and Strategies for Design of DC Bias Resilient Transformers

IEEE Open Access Journal of Power and Energy

Prasad, Akhil; Sudhoff, Scott D.; Monson, Todd; Subramania, Ganapathi S.

Geomagnetic disturbances (GMDs) give rise to geomagnetically induced currents (GICs) on the earth's surface which find their way into power systems via grounded transformer neutrals. The quasi-dc nature of the GICs results in half-cycle saturation of the power grid transformers which in turn results in transformer failure, life reduction, and other adverse effects. Therefore, transformers need to be more resilient to dc excitation. This paper sets forth dc immunity metrics for transformers. Furthermore, this paper sets forth a novel transformer architecture and a design methodology which employs the dc immunity metrics to make it more resilient to dc excitation. This is demonstrated using a time-stepping 2D finite element analysis (FEA) simulation. It was found that a relatively small change in the core geometry significantly increases transformer resiliency with respect to dc excitation.

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Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited)

Kaplar, Robert; Binder, Andrew; Yates, Luke; Allerman, A.A.; Crawford, Mary H.; Dickerson, Jeramy; Armstrong, Andrew A.; Glaser, Caleb E.; Steinfeldt, Bradley; Abate, Vincent M.; Foulk, James W.; Pickrell, Gregory W.; Sharps, Paul; Flicker, Jack D.; Neely, Jason C.; Rashkin, Lee J.; Gill, Lee; Goodrick, Kyle; Monson, Todd; Bock, Jonathan A.; Subramania, Ganapathi S.; Scott, Ethan; Cooper, James

Abstract not provided.

Phonon-polaritonics: Enabling powerful capabilities for infrared photonics

Nanophotonics

Foteinopoulou, Stavroula; Devarapu, Ganga C.R.; Subramania, Ganapathi S.; Krishna, Sanjay; Wasserman, Daniel

Here, we review the progress and most recent advances in phonon-polaritonics, an emerging and growing field that has brought about a range of powerful possibilities for mid- to far-infrared (IR) light. These extraordinary capabilities are enabled by the resonant coupling between the impinging light and the vibrations of the material lattice, known as phonon-polaritons (PhPs). These PhPs yield a characteristic optical response in certain materials, occurring within an IR spectral window known as the reststrahlen band. In particular, these materials transition in the reststrahlen band from a high refractive-index behavior, to a near-perfect metal behavior, to a plasmonic behavior - typical of metals at optical frequencies. When anisotropic they may also possess unconventional photonic constitutive properties thought of as possible only with metamaterials. The recent surge in two-dimensional (2D) material research has also enabled PhP responses with atomically-thin materials. Such vast and extraordinary photonic responses can be utilized for a plethora of unusual effects for IR light. Examples include sub-diffraction surface wave guiding, artificial magnetism, exotic photonic dispersions, thermal emission enhancement, perfect absorption and enhanced near-field heat transfer. Finally, we discuss the tremendous potential impact of these IR functionalities for the advancement of IR sources and sensors, as well as for thermal management and THz-diagnostic imaging.

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III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Optical Materials Express

Anderson, P.D.; Fischer, Arthur J.; Koleske, Daniel D.; Gunning, Brendan P.; Subramania, Ganapathi S.

We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.

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Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

ACS Photonics

Fischer, Arthur J.; Anderson, P.D.; Koleske, Daniel; Subramania, Ganapathi S.

We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-Temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individual QDs directly confirm nonclassical, antibunching behavior. Our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.

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Topological photonic structures for nanophotonics

International Conference on Transparent Optical Networks

Subramania, Ganapathi S.; Anderson, P.D.

Topological photonic structures in analogy to their electronic counterparts can provide new functionalities in nanophotonics. In particular, they can possess topologically protected photonic modes that can propagate unidirectionally without scattering and can have an extreme photonic density of states (PDOS). These unique properties can directly impact many photonic systems in optical communications and in quantum information processing applications such as single photon transport. In analogy to spin Hall effect in electronics, photonic systems can exhibit helicity or pseudo-spin dependent light transport. Below we describe such a system in a honeycomb two-dimensional hole-array photonic crystal. Enabling such properties at optical frequencies and on chip-scale will be very important for practical applications of such phenomena.

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Visible Quantum Nanophotonics

Subramania, Ganapathi S.; Wang, George T.; Fischer, Arthur J.; Wierer, Jonathan J.; Tsao, Jeffrey Y.; Koleske, Daniel; Coltrin, Michael E.; Agarwal, Sapan; Anderson, P.D.; Leung, Ben

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDs into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.

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Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Optical Materials Express

Subramania, Ganapathi S.; Koleske, Daniel; Anderson, P.D.; Povinelli, Michelle L.

We experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the G-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often 'donut'-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However, in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the G-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (μ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.

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High Brightness Room Temperature III-Nitride Based Single Photon Source

Subramania, Ganapathi S.; Anderson, P.D.; Koleske, Daniel

Single photon sources (SPS) are quantum light sources where photons are emitted one at a time instead of randomly (e.g. lasers) or in a bunch (e.g. thermal) that can significantly impact quantum information science (computing and secure communications) and quantum metrology. Some highly desirable features of SPS are low second order correlation (g2),controllable emission, electrically injected room temperature operation with high photon rate, high extraction efficiency and controllable directionality. Approaches taken thus far using different material systems have only addressed a subset of these features. III-nitride based approach offers a clear pathway to deterministic, room temperature (R.T.), electrically injected practical SPS as one can potentially also leverage the knowledge and technology from the light emitting diode (LED) world. Here we will describe a hybrid approach wherein a TiO2 based photonic crystal (PC) cavity is fabricated around an InGaN quantum dot (QD) embedded nanoscale post deterministically placed inside a photonic crystal cavity. This project takes the initial steps necessary to achieve a practical, compact SPS. We have used finite difference time domain simulations to optimize the cavity design to achieve high quality factor, mode overlap with QD and high extraction. We have fabricated InGaN quantum dots using a top-down approach involving dry etch and photoelectrochemical etch followed by electron beam lithography based nanofabrication of photonic crystal cavities.

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Results 1–50 of 125
Results 1–50 of 125