Publications

Topological photonic structures in analogy to their electronic counterparts can provide new functionalities in nanophotonics. In particular, they can possess topologically protected photonic modes that can propagate unidirectionally without scattering and can have an extreme photonic density of states (PDOS). These unique properties can directly impact many photonic systems in optical communications and in quantum information processing applications such as single photon transport. In analogy to spin Hall effect in electronics, photonic systems can exhibit helicity or pseudo-spin dependent light transport. Below we describe such a system in a honeycomb two-dimensional hole-array photonic crystal. Enabling such properties at optical frequencies and on chip-scale will be very important for practical applications of such phenomena.

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Single photon sources (SPS) are quantum light sources where photons are emitted one at a time instead of randomly (e.g. lasers) or in a bunch (e.g. thermal) that can significantly impact quantum information science (computing and secure communications) and quantum metrology. Some highly desirable features of SPS are low second order correlation (g₂),controllable emission, electrically injected room temperature operation with high photon rate, high extraction efficiency and controllable directionality. Approaches taken thus far using different material systems have only addressed a subset of these features. III-nitride based approach offers a clear pathway to deterministic, room temperature (R.T.), electrically injected practical SPS as one can potentially also leverage the knowledge and technology from the light emitting diode (LED) world. Here we will describe a hybrid approach wherein a TiO2 based photonic crystal (PC) cavity is fabricated around an InGaN quantum dot (QD) embedded nanoscale post deterministically placed inside a photonic crystal cavity. This project takes the initial steps necessary to achieve a practical, compact SPS. We have used finite difference time domain simulations to optimize the cavity design to achieve high quality factor, mode overlap with QD and high extraction. We have fabricated InGaN quantum dots using a top-down approach involving dry etch and photoelectrochemical etch followed by electron beam lithography based nanofabrication of photonic crystal cavities.

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