Publications

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Accurate knowledge of thermophysical properties is needed to predict and optimize the thermal performance of microsystems. Thermal conductivity is experimentally determined by measuring quantities such as voltage or temperature and then inferring a thermal conductivity from a thermal model. Thermal models used for data analysis contain inherent assumptions, and the resultant thermal conductivity value is sensitive to how well the actual experimental conditions match the model assumptions. In this paper, a modified data analysis procedure for the steady state Joule heating technique is presented that accounts for bond pad effects including thermal resistance, electrical resistance, and Joule heating. This new data analysis method is used to determine the thermal conductivity of polycrystalline silicon (polysilicon) microbridges fabricated using the Sandia National Laboratories SUMMiT V™ micromachining process over the temperature range of 77-350 K, with the value at 300 K being 71.7 ± 1.5 W/(m K). It is shown that making measurements on beams of multiple lengths is useful, if not essential, for inferring the correct thermal conductivity from steady state Joule heating measurements. © 2012 American Institute of Physics.

This paper reports on experimental and numerical investigations of electrically powered MEMS structures operated under different gas pressure and electrical power conditions. The structures studied are boron-doped single crystal silicon-on-insulator (SOI) microbridges that are heated by an electrical current. The microbridges are 85 μm wide, 125 μm tall and 5.5 mm long and lie 2 μm above the substrate. The impact of the narrow gap in the gas phase thermal transport is evaluated by operating the devices under various nitrogen gas pressure conditions, ranging from 625 Torr to ∼1 mTorr - spanning the continuum to noncontinuum gas heat transfer regimes. Raman thermometry is used to obtain spatially-resolved temperature measurements along the length of the device under the various operating conditions. The large dopant concentration (∼4 × 1019 cm-3) within the active silicon layer is found to affect the Raman spectrum used for thermometry via Fano-type interactions, resulting in an asymmetric Raman line shape. With large Raman peak asymmetries, use of the Raman line width as the temperature metric is less reliable as it shows decreased sensitivity to temperature. However, the asymmetry itself, when considered as a fitting parameter, was found to be a reliable indicator of sample temperature. The measured device temperatures are compared to finite element simulations of the structures. Noncontinuum gas phase heat transfer effects are incorporated into the continuum simulations via temperature discontinuities at the solid-gas interface, provided by a model developed from noncontinuum simulation results. Additionally, the impact of the large dopant concentrations is incorporated into the thermal models via a modified thermal conductivity model which considers impurity scattering effects on thermal transport. The simulation and experimental results show reasonable agreement. Copyright © 2012 by ASME.

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We investigate the role of anisotropy on interfacial transport across solid interfaces by measuring the thermal boundary conductance from 100 to 500 K across Al/Si and Al/sapphire interfaces with different substrate orientations. The measured thermal boundary conductances show a dependency on substrate crystallographic orientation in the sapphire samples (trigonal conventional cell) but not in the silicon samples (diamond cubic conventional cell). The change in interface conductance in the sapphire samples is ascribed to anisotropy in the Brillouin zone along the principal directions defining the conventional cell. This leads to resultant phonon velocities in the direction of thermal transport that vary nearly 40% based on crystallographic direction. © 2011 American Physical Society.

We measure the thermal boundary conductance across Al/Si and Al/ Al 2 O3 interfaces that are subjected to varying doses of proton ion implantation with time domain thermoreflectance. The proton irradiation creates a major reduction in the thermal boundary conductance that is much greater than the corresponding decrease in the thermal conductivities of both the Si and Al2 O3 substrates into which the ions were implanted. Specifically, the thermal boundary conductances decrease by over an order of magnitude, indicating that proton irradiation presents a unique method to systematically decrease the thermal boundary conductance at solid interfaces. © 2011 American Institute of Physics.

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We will present experimental and computational investigations of the thermal performance of microelectromechanical systems (MEMS) as a function of the surrounding gas pressure. Lowering the pressure in MEMS packages reduces gas damping, providing increased sensitivity for certain MEMS sensors; however, such packaging also dramatically affects their thermal performance since energy transfer to the environment is substantially reduced. High-spatial-resolution Raman thermometry was used to measure the temperature profiles on electrically heated, polycrystalline silicon bridges that are nominally 10 microns wide, 2.25 microns thick, 12 microns above the substrate, and either 200 or 400 microns long in nitrogen atmospheres with pressures ranging from 0.05 to 625 Torr. Finite element modeling of the thermal behavior of the MEMS bridges is performed and compared to the experimental results. Noncontinuum gas effects are incorporated into the continuum finite element model by imposing temperature discontinuities at gas-solid interfaces that are determined from noncontinuum simulations. The experimental and simulation results indicate that at pressures below 0.5 Torr the gas-phase heat transfer is negligible compared to heat conduction through the thermal actuator legs. As the pressure increases above 0.5 Torr, the gas-phase heat transfer becomes more significant. At ambient pressures, gas-phase heat transfer drastically impacts the thermal performance. The measured and simulated temperature profiles are in qualitative agreement in the present study. Quantitative agreement between experimental and simulated temperature profiles requires accurate knowledge of temperature-dependent thermophysical properties, the device geometry, and the thermal accommodation coefficient.

Understanding the physics of phonon transport at small length scales is increasingly important for basic research in nanoelectronics, optoelectronics, nanomechanics, and thermoelectrics. We conducted several studies to develop an understanding of phonon behavior in very small structures. This report describes the modeling, experimental, and fabrication activities used to explore phonon transport across and along material interfaces and through nanopatterned structures. Toward the understanding of phonon transport across interfaces, we computed the Kapitza conductance for {Sigma}29(001) and {Sigma}3(111) interfaces in silicon, fabricated the interfaces in single-crystal silicon substrates, and used picosecond laser pulses to image the thermal waves crossing the interfaces. Toward the understanding of phonon transport along interfaces, we designed and fabricated a unique differential test structure that can measure the proportion of specular to diffuse thermal phonon scattering from silicon surfaces. Phonon-scale simulation of the test ligaments, as well as continuum scale modeling of the complete experiment, confirmed its sensitivity to surface scattering. To further our understanding of phonon transport through nanostructures, we fabricated microscale-patterned structures in diamond thin films.

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This report summarizes the work completed during FY2007 and FY2008 for the LDRD project ''Hybrid Plasma Modeling''. The goal of this project was to develop hybrid methods to model plasmas across the non-continuum-to-continuum collisionality spectrum. The primary methodology to span these regimes was to couple a kinetic method (e.g., Particle-In-Cell) in the non-continuum regions to a continuum PDE-based method (e.g., finite differences) in continuum regions. The interface between the two would be adjusted dynamically ased on statistical sampling of the kinetic results. Although originally a three-year project, it became clear during the second year (FY2008) that there were not sufficient resources to complete the project and it was terminated mid-year.

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This report documents technical work performed to complete the ASC Level 2 Milestone 2841: validation of thermal models for a prototypical MEMS thermal actuator. This effort requires completion of the following task: the comparison between calculated and measured temperature profiles of a heated stationary microbeam in air. Such heated microbeams are prototypical structures in virtually all electrically driven microscale thermal actuators. This task is divided into four major subtasks. (1) Perform validation experiments on prototypical heated stationary microbeams in which material properties such as thermal conductivity and electrical resistivity are measured if not known and temperature profiles along the beams are measured as a function of electrical power and gas pressure. (2) Develop a noncontinuum gas-phase heat-transfer model for typical MEMS situations including effects such as temperature discontinuities at gas-solid interfaces across which heat is flowing, and incorporate this model into the ASC FEM heat-conduction code Calore to enable it to simulate these effects with good accuracy. (3) Develop a noncontinuum solid-phase heat transfer model for typical MEMS situations including an effective thermal conductivity that depends on device geometry and grain size, and incorporate this model into the FEM heat-conduction code Calore to enable it to simulate these effects with good accuracy. (4) Perform combined gas-solid heat-transfer simulations using Calore with these models for the experimentally investigated devices, and compare simulation and experimental temperature profiles to assess model accuracy. These subtasks have been completed successfully, thereby completing the milestone task. Model and experimental temperature profiles are found to be in reasonable agreement for all cases examined. Modest systematic differences appear to be related to uncertainties in the geometric dimensions of the test structures and in the thermal conductivity of the polycrystalline silicon test structures, as well as uncontrolled nonuniform changes in this quantity over time and during operation.

This study examines the effects of bond pads on the measurement of thermal conductivity for micromachined polycrystalline silicon using suspended test structures and a steady state resistance method. Bond pad heating can invalidate the assumption of constant temperature boundary conditions used for data analysis. Bond pad temperatures above the heat sink temperature arise from conduction out of the bridge test element and Joule heating in the bond pad. Simulations results determined correction factors for the electrical resistance offset, Joule heating effects in the beam, and Joule heating in the bond pads. Fillets at the base of the beam reduce the effect of bond pad heating until they become too large. Copyright © 2007 by ASME.

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