Altering Thermal Boundary Conductance in Al/Al2O3 and Al/Si Boundaries Using Ion Beam Radiation
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Physical Review B - Condensed Matter and Materials Physics
We investigate the role of anisotropy on interfacial transport across solid interfaces by measuring the thermal boundary conductance from 100 to 500 K across Al/Si and Al/sapphire interfaces with different substrate orientations. The measured thermal boundary conductances show a dependency on substrate crystallographic orientation in the sapphire samples (trigonal conventional cell) but not in the silicon samples (diamond cubic conventional cell). The change in interface conductance in the sapphire samples is ascribed to anisotropy in the Brillouin zone along the principal directions defining the conventional cell. This leads to resultant phonon velocities in the direction of thermal transport that vary nearly 40% based on crystallographic direction. © 2011 American Physical Society.
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Applied Physics Letters
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Applied Physics Letters
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