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IEEE Transactions on Nuclear Science
Phillips, Stan D.; Moen, Kurt A.; Najafizadeh, Laleh; Diestelhorst, Ryan M.; Sutton, Akil K.; Cressler, John D.; Vizkelethy, Gyorgy; Dodd, Paul E. ; Marshall, Paul W.
We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift registers implemented with N-Ring SiGe HBTs irradiated in a broadbeam environment at Texas A&M's Cyclotron Institute. The error cross-section curve of the N-Ring based register is found to be larger at larger ion LETs than the standard SiGe register, which is clearly counter-intuitive. We have worked to resolve the discrepancy between the measured circuit results and the device-level IBICC measurements, by re-measuring single-device N-Ring SiGe HBTs using a time-resolved ion beam induced charge (TRIBIC) set-up that allows direct capture of nodal transients. Coupling these measurements with full 3-D TCAD simulations provides complete insight into the origin of transient currents in an N-Ring SiGe HBT. The detailed structure of these transients and their bias dependencies are discussed, together with the ramifications for the design of space-borne analog and digital circuits using SiGe HBTs. © 2010 IEEE.
IEEE Transactions on Nuclear Science
Thrivikraman, Tushar K.; Wilcox, Edward; Phillips, Stanley D.; Cressler, John D.; Marshall, Cheryl; Vizkelethy, Gyorgy; Dodd, Paul E. ; Marshall, Paul
We report on the design and measured results of a new SiGe HBT radiation hardening by design technique called the inverse-mode cascode (IMC). A third-generation SiGe HBT IMC device was tested in a time resolved ion beam induced charge collection (TRIBICC) system, and was found to have over a 75% reduction in peak current transients with the use of an n-Tiedown on the IMC sub-collector node. Digital shift registers in a 1st-generation SiGe HBT technology were designed and measured under a heavy-ion beam, and shown to increase the LET threshold over standard npn only shift registers. Using the CREME96 tool, the expected orbital bit-errors/day were simulated to be approximately 70% lower with the IMC shift register. These measured results help demonstrate the efficacy of using the IMC device as a low-cost means for improving the SEE radiation hardness of SiGe HBT technology without increasing area or power. © 2010 IEEE.
Dodd, Paul E. ; Shaneyfelt, Marty R. ; Schwank, James R.
IEEE Transactions on Nuclear Science
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Flores, Richard S. ; Stevens, Jeffrey S. ; Swanson, Scot E.
Witcher, Joseph B. ; Savignon, Daniel J. ; Dodd, Paul E. ; Shaneyfelt, Marty R. ; Young, Ralph W. ; Draper, Bruce L. ; Schwank, James R.
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Flores, Richard S. ; Stevens, Jeffrey S. ; Swanson, Scot E.
The amounts of charge collection by single-photon absorption to that by two-photon absorption laser testing techniques have been directly compared using specially made SOI diodes. Details of this comparison are discussed.
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Flores, Richard S. ; Stevens, Jeffrey S. ; Swanson, Scot E.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Shaneyfelt, Marty R. ; Schwank, James R. ; Dodd, Paul E. ; Hill, Thomas A. ; Swanson, Scot E.
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 m SOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (including the use of different implant materials and thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to significant long-term radiation-induced aging effects. © 2009 IEEE.
IEEE Transactions on Nuclear Science
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Felix, James A. ; Baggio, J.; Ferlet-Cavrois, V.; Paillet, P.; Label, K.A.; Pease, R.L.; Simons, M.; Cohn, L.M.
Proton-induced singl -event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects. © 2006 IEEE.
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Schwank, James R. ; Dodd, Paul E. ; Shaneyfelt, Marty R.
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Felix, James A.
Herrera, Gilbert V. ; McCormick, Frederick B. ; Nielson, Gregory N. ; Nordquist, Christopher N. ; Okandan, Murat O. ; Olsson, Roy H. ; Ortiz, Keith O. ; Platzbecker, Mark R. ; Resnick, Paul J. ; Shul, Randy J. ; Bauer, Todd B. ; Sullivan, Charles T. ; Watts, Michael W. ; Blain, Matthew G. ; Dodd, Paul E. ; Dondero, Richard D. ; Garcia, Ernest J. ; Galambos, Paul ; Hetherington, Dale L. ; Hudgens, James J.
IEEE Transactions on Nuclear Science
Shaneyfelt, Marty R. ; Schwank, James R. ; Dodd, Paul E. ; Felix, James A.
The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits for use in space and/or high-energy particle accelerator applications. These include test guidelines for total dose hardness assurance qualification and single event effects (SEE) qualification. In this work, issues associated with these hardness assurance test guidelines are discussed. For total dose qualification, the main test methodologies used in the U.S. and Europe are reviewed and differences between the guidelines are discussed. In addition, some key issues that must be considered when performing total dose hardness assurance testing are addressed. Following these discussions we review some emerging issues relevant to SEE device qualification that are not covered in present SEE test guidelines. The hardness assurance implications of these issues are addressed. © 2008 IEEE.
IEEE Transactions on Nuclear Science
Schwank, James R. ; Flores, Richard S. ; Dodd, Paul E. ; Shaneyfelt, Marty R.
Herrera, Gilbert V. ; McCormick, Frederick B. ; Nielson, Gregory N. ; Nordquist, Christopher N. ; Okandan, Murat O. ; Olsson, Roy H. ; Ortiz, Keith O. ; Platzbecker, Mark R. ; Resnick, Paul J. ; Shul, Randy J. ; Bauer, Todd B. ; Sullivan, Charles T. ; Watts, Michael W. ; Blain, Matthew G. ; Dodd, Paul E. ; Dondero, Richard D. ; Garcia, Ernest J. ; Galambos, Paul ; Hetherington, Dale L. ; Hudgens, James J.
IEEE Transactions on Nuclear Science
Dodd, Paul E.
IEEE Transactions on Nuclear Science
Shaneyfelt, Marty R. ; Felix, James A. ; Dodd, Paul E. ; Schwank, James R.
IEEE Transactions on Nuclear Science
Schwank, James R. ; Shaneyfelt, Marty R. ; Felix, James A. ; Dodd, Paul E. ; Swanson, Scot E. ; Thornberg, Steven M. ; Hochrein, James M.
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E.
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; Felix, James A.
Schwank, James R. ; Shaneyfelt, Marty R. ; Felix, James A. ; Dodd, Paul E.
Large and unexpected radiation-induced voltage shifts have been observed for some MOS technologies exposed to moisture. The mechanisms for these large voltage shifts and their implications for long-term aging are discussed.
Shaneyfelt, Marty R. ; Felix, James A. ; Schwank, James R. ; Dodd, Paul E.
Dodd, Paul E.
IEEE Transactions on Nuclear Science, Dec. 2007
Dodd, Paul E. ; Schwank, James R. ; Shaneyfelt, Marty R. ; Felix, James A.
IEEE Transactions on Nuclear Science, Dec. 2007
Dodd, Paul E.
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