Visible Light LVP on Bulk Silicon Substrates
Abstract not provided.
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Jump to search filtersVisible light LVP on bulk silicon devices
Conference Proceedings from the International Symposium for Testing and Failure Analysis
Visible light laser voltage probing (LVP) for improved backside optical spatial resolution is demonstrated on ultrathinned bulk Si samples. A prototype system for data acquisition, a method to produce ultra-thinned bulk samples as well as LVP signal, imaging, and waveform acquisition are described on bulk Si devices. Spatial resolution and signal comparison with conventional, infrared LVP analysis is discussed.
Visible Light LVP on Ultra-Thinned Substrates
Abstract not provided.
Visible Light LVP on Ultra-Thinned Substrates
Abstract not provided.
Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Inductively Coupled Plasma Etching of InP with Cl2/H2/Ar Plasma
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry
Abstract not provided.
SOI substrate removal for SEE characterization: Techniques and applications
IEEE Transactions on Nuclear Science
Techniques for removing the back substrate of SOI devices are described for both packaged devices and devices at the die level. The use of these techniques for microbeam, heavy-ion, and laser testing are illustrated. © 2012 IEEE.
Dielectric Resonators for Backward Wave Infrared Metamaterials
Abstract not provided.
Dielectric Resonators for Backward Wave Infrared Metamaterials
Abstract not provided.
High Precision Fabrication of Polarization Insensitive Resonant Grating Filters
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
High precision fabrication of polarization insensitive resonant grating filters
Abstract not provided.
All-Dielectric Infrared Metamaterials
Abstract not provided.
All-Dielectric Infrared Metamaterials
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
SOI Substrate Removal for SEE Characterization and Recent Results
Abstract not provided.
Transport and Charge Sensing for MOS and SiGe Quantum Dot Devices
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
RF SET and charge sensing in a Si MOS Device with Lateral Geometry
Abstract not provided.
Infrared Dielectric Resonator Metamaterial
Abstract not provided.
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