Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum-silicon nitride (Mo-SiNx) GMs via optimization of the sputter deposition atmosphere. For Mo-SiNx GMs deposited in a mixed Ar/N2 environment, x-ray photoemission spectroscopy shows a 40%-60% reduction of interfacial Mo-silicide defects compared to Mo-SiNx GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 104-105 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo-SiNx GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δ σ ω . Remarkably, these GMs display a Δ σ ω up to 107, a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.
Understanding and controlling nanoscale interface phenomena, such as band bending and secondary phase formation, is crucial for electronic device optimization. In granular metal (GM) studies, where metal nanoparticles are embedded in an insulating matrix, the importance of interface phenomena is frequently neglected. Here, we demonstrate that GMs can serve as an exemplar system for evaluating the role of secondary phases at interfaces through a combination of x-ray photoemission spectroscopy (XPS) and electrical transport studies. We investigated SiNx as an alternative to more commonly used oxide-insulators, as SiNx-based GMs may enable high temperature applications when paired with refractory metals. Comparing Co-SiNx and Mo-SiNx GMs, we found that, in the tunneling-dominated insulating regime, Mo-SiNx had reduced metal-silicide formation and orders-of-magnitude lower conductivity. XPS measurements indicate that metal-silicide and metal-nitride formation are mitigatable concerns in Mo-SiNx. Given the metal-oxide formation seen in other GMs, SiNx is an appealing alternative for metals that readily oxidize. Furthermore, SiNx provides a path to metal-nitride nanostructures, potentially useful for various applications in plasmonics, optics, and sensing.
High-altitude electromagnetic pulse events are a growing concern for electric power grid vulnerability assessments and mitigation planning, and accurate modeling of surge arrester mitigations installed on the grid is necessary to predict pulse effects on existing equipment and to plan future mitigation. While some models of surge arresters at high frequency have been proposed, experimental backing for any given model has not been shown. This work examines a ZnO lightning surge arrester modeling approach previously developed for accurate prediction of nanosecond-scale pulse response. Four ZnO metal-oxide varistor pucks with different sizes and voltage ratings were tested for voltage and current response on a conducted electromagnetic pulse testbed. The measured clamping response was compared to SPICE circuit models to compare the electromagnetic pulse response and validate model accuracy. Results showed good agreement between simulation results and the experimental measurements, after accounting for stray testbed inductance between 100 and 250 nH.
Negative and zero coefficient of thermal expansion (CTE) materials are of interest for developing polymer composites in electronic circuits that match the expansion of Si and in zero CTE supports for optical components, e.g., mirrors. In this work, the processing challenges and stability of ZrW2O8, HfW2O8, HfMgW3O12, Al(HfMg)0.5W3O12, and Al0.5Sc1.5W3O12 negative and zero thermal expansion coefficient ceramics are discussed. Al0.5Sc1.5W3O12 is demonstrated to be a relatively simple oxide to fabricate in large quantity and is shown to exhibit single phase up to 1300 °C in air and inert N2 environments. The negative and zero CTE behavior was confirmed with dilatometry. Thermal conductivity and heat capacity were reported for the first time for HfMgW3O12 and Al0.5Sc1.5W3O12 and thermal conductivity was found to be very low (~0.5 W/mK). Grüneisen parameter is also estimated. Methods for integration of Al0.5Sc1.5W3O12 with other materials was examined and embedding 50 vol% of the ceramic powder in flexible epoxy was demonstrated with a commercial vendor.
We present an in-depth study of metal-insulator interfaces within granular metal (GM) films and correlate their interfacial interactions with structural and electrical transport properties. Nominally 100 nm thick GM films of Co and Mo dispersed within yttria-stabilized zirconia (YSZ), with volumetric metal fractions (φ) from 0.2-0.8, were grown by radio frequency co-sputtering from individual metal and YSZ targets. Scanning transmission electron microscopy and DC transport measurements find that the resulting metal islands are well-defined with 1.7-2.6 nm average diameters and percolation thresholds between φ = 0.4-0.5. The room temperature conductivities for the φ = 0.2 samples are several orders of magnitude larger than previously-reported for GMs. X-ray photoemission spectroscopy indicates both oxygen vacancy formation within the YSZ and band-bending at metal-insulator interfaces. The higher-than-predicted conductivity is largely attributed to these interface interactions. In agreement with recent theory, interactions that reduce the change in conductivity across the metal-insulator interface are seen to prevent sharp conductivity drops when the metal concentration decreases below the percolation threshold. These interface interactions help interpret the broad range of conductivities reported throughout the literature and can be used to tune the conductivities of future GMs.
For high voltage electrical devices, prevention of high voltage breakdown is critical for device function. Use of polymeric encapsulation such as epoxies is common, but these may include air bubbles or other voids of varying size. The present work aimed to model and experimentally determine the size dependence of breakdown voltage for voids in an epoxy matrix, as a step toward establishing size criteria for void screening. Effects were investigated experimentally for both one-dimensional metal/epoxy/air/epoxy/metal gap sizes from 50 μm to 10 mm, as well as spherical voids of 250 μm, 500 μm, 1 mm and 2 mm sizes. These experimental results were compared to modified Paschen curve and particle-in-cell discharge models; minimum breakdown voltages of 6 - 8.5 kV appeared to be predicted by 1D models and experiments, with minimum breakdown voltage for void sizes of 0.2 - 1 mm. In a limited set of 3D experiments on 250 μm, 500 μm, 1 mm and 2 mm voids within epoxy, the minimum breakdown voltages observed were 18.5 - 20 kV, for 500 μm void sizes. These experiments and models are aimed at providing initial size and voltage criteria for tolerable void sizes and expected discharge voltages to support design of encapsulated high voltage components.