Strong light-matter interaction of metamaterials and intersubband transitions
Abstract not provided.
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Jump to search filtersStrong Coupling in the Subwavelength Limit Using Metamaterial Resonators
Abstract not provided.
Gold Substrate-Induced Single-Mode Lasing of GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Optical manipulation with plasmonic beam shaping antenna structures
Advances in OptoElectronics
Near-field optical trapping of objects using plasmonic antenna structures has recently attracted great attention. However, metal nanostructures also provide a compact platform for general wavefront engineering of intermediate and far-field beams. Here, we analyze optical forces generated by plasmonic beam shaping antenna structures and show that they can be used for general optical manipulation such as guiding of a dielectric particle along a linear or curved trajectory. This removes the need for bulky diffractive optical components and facilitates the integration of optical force manipulation into a highly functional, compact system. © 2012 Young Chul Jun and Igal Brener.
Semiconductor Approaches for Tunable Metamaterials in the Infrared
Abstract not provided.
Strong Coupling using Metamaterials
Abstract not provided.
Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques
Abstract not provided.
Epsilon near zero material for electromagnetic energy transport through sub-wavelength channels
Abstract not provided.
Colloidal Quantum Dot Based Plasmon Assisted Nanoscale Laser
Abstract not provided.
Electrical tuning of mid-infrared metamaterials based on semiconductor device structures
Abstract not provided.
Single-mode GaN nanowire lasers
Optics Express
We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.
Strong coupling between metamaterial resonators and AlAs nano layers
Abstract not provided.
III-Nitride Nanowires: Novel Materials for Lighting and Photovoltaics
Abstract not provided.
Semiconductor Approaches for Tunable Metamaterials in the Infrared
Abstract not provided.
Electrically Tunable Infrared Plasmonic Metamaterials based on Semiconductor Device Structures
Abstract not provided.
Single-Mode GaN Nanowire Lasers
Abstract not provided.
Electrically-Controlled Thermal Infrared Metamaterial Devices
Abstract not provided.
Semiconductor Approaches for Tunable Metamaterials in the Mid-Infrared
Abstract not provided.
Amplitude and phase-resolved measurements of dielectric metamaterials in the mid-infrared using a time-domain spectroscopy technique
Abstract not provided.
Dielectric Resonators for Backward Wave Infrared Metamaterials
Abstract not provided.
Single Mode GaN Nanowire Lasers
Abstract not provided.
Phase resolved near-field mode imaging for the design of frequency-selective surfaces
Proposed for publication in optics express.
Abstract not provided.
Electrically Tunable Mid-Infrared Metamaterials
Abstract not provided.
Semiconductor approaches for tunable metamaterials in the infrared
Abstract not provided.
Top-down fabrication of GaN-based nanorod LEDs and lasers
Proceedings of SPIE - The International Society for Optical Engineering
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
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