Electrically Tunable Mid-Infrared Metamaterials based on Semiconductor Device Structures
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Proposed for publication in Institute of Physics (IOP) special issue of Active Metamaterials.
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Proposed for publication in Applied Physics Letters.
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CLEO: Science and Innovations, CLEO_SI 2012
We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films. © OSA 2012.
2011 5th Rio De La Plata Workshop on Laser Dynamics and Nonlinear Photonics, LDNP 2011
We explore the issue of interactions between metamaterial resonators and different types of absorbers placed in proximity to these resonators. Very clear anticrossing behaviour and level splitting is observed when IR phonons interact with planar metamaterials. More complex dipole transitions can be designed using semiconductor bandgap engineering. We show experimentally the coupling between metamaterial resonances and intersubband transitions and discuss this mechanism for electrical tuning of metamaterials throughout the optical infrared spectral region. Finally we will discuss interactions in 3D dielectric resonator metamaterials. © 2011 IEEE.
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Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Membrane projection lithography is extended from a single layer fabrication technique to a multilayer process, adding polymeric backfill and planarization after each layer is completed. Unaligned contact lithography is used as a rapid prototyping tool to aid in process development, patterning resist membranes in seconds without requiring long e-beam write times. The fabricated multilayer structures show good resistance to solvent attack from subsequent process steps and demonstrate in-plane and out of plane multilayer metallic inclusions in a dielectric host, which is a critical step in the path to develop bulklike metamaterials at optical frequencies.
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Optical Materials Express
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Physical Review Letters
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