Effects of Metallization Variation on III-V HBTs under Ion Irradiation
Abstract not provided.
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Jump to search filtersSingle Ion Displacement Effects in Heterojunction Bipolar Transistors
Abstract not provided.
Automated detection of single particle-induced gain degradation in irradiated heterojunction bipolar transistors
Abstract not provided.
Single Ion Displacement Effects in Heterojunction Bipolar Transistors
Abstract not provided.
Single Ion Displacement Effects in III-V Heterojunction Bipolar Transistors
Abstract not provided.
Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors
Abstract not provided.
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing
Abstract not provided.
Radiation Testing Capability for Electronic Devices and Circuits at Sandia's Ion Beam Laboratory
Abstract not provided.
Potential Evidence for Post-Irradiation Defect Evolution Resulting in Enhanced Gain Degradation
Abstract not provided.
Revisiting Recombination Current in Electron Ion and Neutron Damaged GaAs Diodes
Abstract not provided.
Radiation damage in bipolar junction transistors (BJTs)
Abstract not provided.
Effects of current injection annealing on III-V heterojunction bipolar transistors
Abstract not provided.
Effects of Neutron and Electron Beam Pre-irradiation on Photocurrent
Abstract not provided.
Comparison Between Electrical and Direct Defect Measurements for Ion and Neutron Irradiations
Abstract not provided.
Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devices
Physica B: Condensed Matter
This work explores the feasibility of mechanistically modeling the transient behavior of defects and carriers in bipolar Si devices exposed to pulses of MeV neutrons. Our approach entails a detailed, finite-element treatment of the diffusion, field-drift, and reactions of well-established primal defects and reacted states, taking into account the localization of displacement damage within secondary cascades. The modeling captures a variety of the properties of pulse-neutron-irradiated transistors observed from electrical measurements and deep-level transient spectroscopy, using parameter values consistent with independently available information. © 2007 Elsevier B.V. All rights reserved.
Comparison of displacement damage due to ion and neutron beam irradiations in silicon bipolar junction transistors
Abstract not provided.
Considerations on the Relationship Between Dosimetry Metrics and Experimental Conditions
Abstract not provided.
QASPR Program At Sandia National Laboratories
Abstract not provided.
Metrics for Comparison Between Displacement Damage due to Ion Beam and Neutron Irradiation in Silicon BJTs
Abstract not provided.
Comparison between ion beam and fast neutron irradiation in silicon BJTs
Abstract not provided.
Metrics for comparison between displacement damage due to ion beam and neutron irradiation in silicon BJTs
Abstract not provided.
Application of Spallation Neutron Sources in Support of Radiation Hardness Studies
Abstract not provided.
Damage equivalence of heavy ions in silicon bipolar junction transistors
IEEE Transactions on Nuclear Science
Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.
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