Publications

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The characterization of the uncertainty in radiation damage metrics presents many challenges. This paper examines the current approaches to characterizing radiation damage metrics such as hydrogen and helium gas production, material heating, trapped charge in microelectronics, and lattice displacement damage. Critical uncertainty aspects go beyond just the material cross sections and involve the consideration of energy-dependent cross reaction correlations, the recoil ion energy spectrum, and models used for the partitioning of the recoil ion energy into various forms of energy deposition. This paper starts with a review of terminology and then examines the current approaches in the characterization of uncertainty in radiation damage metrics for several applications. The major deficiencies in the uncertainty of the damage metric characterization are also identified.

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The radiation effects community needs clear, well-documented, neutron energy-dependent responses that can be used in assessing radiation-induced material damage to GaAs semiconductors and for correlating observed radiation-induced changes in the GaAs electronic properties with computed damage metrics. In support of the objective, this document provides: a) a clearly defined set of relevant neutron response functions for use in dosimetry applications; b) clear mathematical expressions for the defined response functions; and c) updated quantitative values for the energy- dependent response functions that reflect the best current nuclear data and modelling. This document recaps the legacy response functions. It then surveys the latest nuclear data and updates the recommended response function to support current GaAs damage studies. A detailed tabulation for six of the energy-dependent response functions is provided in an Appendix.

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The emerging use of the physics-based athermal recombination-corrected displacement per atom (arc-dpa) model for the displacement damage efficiency has motivated a re-evaluation of the historical empirically-derived GaAs damage response function with the purpose of highlighting needs for future analytical and experimental work. The 1-MeV neutron damage equivalence methodology used in the ASTM E-722 standard for GaAs has been re-evaluated using updated nuclear data. This yielded a higher fidelity representation of the GaAs displacement kerma and, through the use of the refined PKA recoil energy-dependent damage efficiency model, an updated 1-MeV(GaAs) displacement damage function. This re-evaluation included use of the Norgett-Robinson-Torrens (NRT) model for an updated threshold treatment, rather than the sharp-threshold Kinchin-Pease model used in the current ASTM standard. The underlying nuclear data evaluations have been updated to use the ENDF/VIII.0 75As and TENDL-2019 71Ga/69Ga evaluations. The displacement kerma and 1-MeV-equivalent damage responses were calculated using a modified NJOY-2016 code which allowed for refinements in some of the damage models. This paper shows that an updated displacement damage function, based upon the latest nuclear data, is consistent with the experimental data used to develop the current ASTM E-722 GaAs standard. Using a double ratio approach to compare the available experimental data with the calculated response, the average legacy double ratio was found to be 0.97±0.05 and the average updated double ratio was found to be 0.94 ±0.05.

This report provides basic background data on the Manipulate-2020 code. This code is used for processing and "manipulation" of nuclear data in support of radiation metrology applications. The code is made available on the open GitHub repository and is available to the general nuclear data community.

GaN has electronic properties that make it an excellent material for the next generation of power electronics; however, its radiation hardening still needs further understanding before it is used in radiation environments. In this work we explored the response of commercial InGaN LEDs to two different radiation environments: ion and gamma irradiations. For ion irradiations we performed two types of irradiations at the Ion Beam Lab (IBL) at Sandia National Laboratories (SNL): high energy and end of range (EOR) irradiations. For gamma irradiations we fielded devices at the gamma irradiation facility (GIF) at SNL. The response of the LEDs to radiation was investigated by IV, light output and light output vs frequency measurements. We found that dose levels up to 500 krads do not degrade the electrical properties of the devices and that devices exposed to ion irradiations exhibit a linear and non- linear dependence with fluence for two different ranges of fluence levels. We also performed current injection annealing studies to explore the annealing properties of InGaN LEDs.

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories' CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

High quality nuclear data is the most fundamental underpinning for all neutron metrology applications. This paper describes the release of version II of the International Reactor Dosimetry and Fusion File (IRDFF-II) that contains a consistent set of nuclear data for fission and fusion neutron metrology applications up to 60 MeV neutron energy. The library is intended to support: a) applications in research reactors; b) safety and regulatory applications in the nuclear power generation in commercial fission reactors; and c) material damage studies in support of the research and development of advanced fusion concepts. The paper describes the contents of the library, documents the thorough verification process used in its preparation, and provides an extensive set of validation data gathered from a wide range of neutron benchmark fields. The new IRDFF-II library includes 119 metrology reactions, four cover material reactions to support self-shielding corrections, five metrology metrics used by the dosimetry community, and cumulative fission products yields for seven fission products in three different neutron energy regions. In support of characterizing the measurement of the residual nuclei from the dosimetry reactions and the fission product decay modes, the present document lists the recommended decay data, particle emission energies and probabilities for 68 activation products. It also includes neutron spectral characterization data for 29 neutron benchmark fields for the validation of the library contents. Additional six reference fields were assessed (four from plutonium critical assemblies, two measured fields for thermal-neutron induced fission on 233U and 239Pu targets) but not used for validation due to systematic discrepancies in C/E reaction rate values or lack of reaction-rate experimental data. Another ten analytical functions are included that can be useful for calculating average cross sections, average energy, thermal spectrum average cross sections and resonance integrals. The IRDFF-II library and comprehensive documentation is available online at www-nds.iaea.org/IRDFF/. Evaluated cross sections can be compared with experimental data and other evaluations at www-nds.iaea.org/exfor/endf.htm. The new library is expected to become the international reference in neutron metrology for multiple applications.

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Neutron dosimetry monitors should be used during all irradiations in the Annular Core Research Reactor. This report provides the recommended conversion factors that should be used to translate the monitor dosimeter read-outs into the damage metrics that are typically used by experimenters to assess the results of their experiment. These conversion factors are based upon the use of the latest least-squares adjusted neutron spectrum determination to describe the Sandia National Laboratories reference neutron fields and the latest International Atomic Energy Agency recommended dosimetry cross sections to capture the response of the dosimeter. The resulting conversion factors are built into the dosimetry results routinely provided by the Radiation Metrology Laboratory.

A general formulation of silicon damage metrics and associated energy-dependent response functions relevant to the radiation effects community is provided. Using this formulation, a rigorous quantitative treatment of the energy-dependent uncertainty contributors is performed. This resulted in the generation of a covariance matrix for the displacement kerma, the Norgett-Robinson-Torrens-based damage energy, and the 1-MeV(Si)-equivalent damage function. When a careful methodology is used to apply a reference 1-MeV damage value, the systematic uncertainty in the fast fission region is seen to be removed, and the uncertainty for integral metrics in broad-based fission-based neutron fields is demonstrated to be significantly reduced.

Here, a general formulation of silicon damage metrics and associated energy-dependent response functions relevant to the radiation effects community is provided. Using this formulation, a rigorous quantitative treatment of the energy-dependent uncertainty contributors is performed. This resulted in the generation of a covariance matrix for the displacement kerma, the NRT-based damage energy, and the 1-MeV(Si) equivalent damage function. Lastly, when a careful methodology is used to apply a reference 1-MeV damage value, the systematic uncertainty in the fast fission region is seen to be removed and the uncertainty for integral metrics in broad-based fission-based neutron fields is demonstrated to be significantly reduced.

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The process of determining the uncertainty in the neutron fluence from the measured activity of a dosimetry monitor is reviewed and the importance of treating the energy-dependent correlation is illustrated using several representative neutron fields. The process of determining the uncertainty in the neutron fluence when a transfer calibration is used is then detailed. The conversion factor, when a transfer calibration is used, has a term that has an integral over the cross section appearing in both the numerator and the denominator. This term introduces a nonlinear dependence on the cross section within the conversion factor and an explicit correlation between the terms appearing in the numerator and denominator of the conversion factor. A method for rigorously treating this nonlinear uncertainty propagation is presented. This method is based upon utilizing the covariance matrix for the cross section and utilizing a statistical sampling approach based on a Cholesky transformation of this covariance matrix. This methodology is then applied to the determination of the uncertainty from a transfer calibration for a set of nine neutron spectra based upon using the 32S(n,p)32P reaction and a transfer calibration in a 2 5 2Cf standard benchmark neutron field. A very strong correlation is found in the cross-section terms as they appear in the numerator and in the denominator. When a rigorous treatment is used to propagate the uncertainty due to the cross section for the dosimetry monitor, the uncertainty in the conversion factor is reduced by a factor of more than ten times from a worst-case approach that treats the uncertainty components in the numerator and denominator as uncorrelated. This ten times difference is also seen when the comparison is made between a rigorous treatment and a treatment of the cross-section contributions where the numerator and denominator are treated as uncorrelated (i.e., when compared to a root-mean-square approach).

The radiation effects community embraces the importance of quantifying uncertainty in model predictions and the importance of propagating this uncertainty into the integral metrics used to validate models, but they are not always aware of the importance of addressing the energy- and reaction-dependent correlations in the underlying uncertainty contributors. This paper presents a rigorous high-fidelity Total Monte Carlo approach that addresses the correlation in the underlying uncertainty components and quantifies the role of both energy and reaction-dependent correlations in a sample application that addresses the damage metrics relevant to silicon semiconductors.

A bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy spectra generated in nuclear reactor and high-energy-density physics environments. The technique has been shown to yield 1-MeV(Si) equivalent neutron fluence measurements comparable to traditional neutron activation dosimetry. This paper significantly extends previous results by evaluating three types of bipolar devices utilized as displacement damage sensors at a nuclear research reactor and at a Pelletron particle accelerator. Ionizing dose effects are compensated for via comparisons with 10-keV X-ray and/or cobalt-60 gamma ray irradiations. Nonionizing energy loss calculations adequately approximate the correlations between particle and device responses and provide evidence for the use of one particle type to screen the sensitivity of the other.

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