On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
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The goal of this project was to develop high frequency quality factor (fQ) product acoustic resonators matched to a standard RF impedance of 50 {Omega} using overmoded bulk acoustic wave (BAW) resonators. These resonators are intended to serve as filters in a chip scale mechanical RF spectrum analyzer. Under this program different BAW resonator designs and materials were studied theoretically and experimentally. The effort resulted in a 3 GHz, 50 {Omega}, sapphire overmoded BAW with a fQ product of 8 x 10{sup 13}, among the highest values ever reported for an acoustic resonator.
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In this work, we demonstrated engineered modification of propagation of thermal phonons, i.e. at THz frequencies, using phononic crystals. This work combined theoretical work at Sandia National Laboratories, the University of New Mexico, the University of Colorado Boulder, and Carnegie Mellon University; the MESA fabrication facilities at Sandia; and the microfabrication facilities at UNM to produce world-leading control of phonon propagation in silicon at frequencies up to 3 THz. These efforts culminated in a dramatic reduction in the thermal conductivity of silicon using phononic crystals by a factor of almost 30 as compared with the bulk value, and about 6 as compared with an unpatterned slab of the same thickness.
IEEE International Ultrasonics Symposium, IUS
The thermal conductivity of single crystal silicon was engineered using lithographically formed phononic crystals. Specifically, sub-micron periodic through-holes were patterned in 500nm-thick silicon membranes to construct phononic crystals, and through phonon scattering enhancement, heat transfer was significantly reduced. The thermal conductivity of silicon phononic crystals was measured as low as 32.6W/mK, which is a ∼75% reduction compared to bulk silicon thermal conductivity [1]. This corresponds to a 37% reduction even after taking into account the contributions of the thin-film and volume reduction effects, while the electrical conductivity was reduced only by as much as the volume reduction effect. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading toward huge performance improvements where heat management is important. © 2011 IEEE.
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