MgO-CaO alloys for GaN and AlGaN gate oxides
Abstract not provided.
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Jump to search filtersUltra-Wide-Bandgap AlGaN Power Electronic Devices
Abstract not provided.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
Reliability Characterization of Wide-Bandgap Semiconductor Switches
Abstract not provided.
A Grand Challenge for Power Electronics: Cheap Efficient and Ubiquitous Photovoltaics
Abstract not provided.
Ultra-Wide-Bandgap AlGaN Power Diodes and Transistors
Abstract not provided.
Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited)
Abstract not provided.
Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited)
Abstract not provided.
An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact
Device Research Conference - Conference Digest, DRC
The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
Switching Characterization of Wide-Bandgap Power Semiconductor Devices
Abstract not provided.
Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Abstract not provided.
An AlN/Al0.85Ga0.15N high electron mobility transistor
Applied Physics Letters
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.
Al00.3Ga0.7N PN diode with breakdown voltage >1600 V
Electronics Letters
Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.
Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes
Abstract not provided.
Miniature High Voltage High Temperature Component Package Development
Abstract not provided.
Miniature High Voltage High Temperature Component Package Development
Abstract not provided.
Generation and Characterization of Two-Photon Absorption Pulsed-Laser Single- Event Beam Line for Wide Band-Gap Materials: Application to Single-Event Transients in a Vertical GaN Diode
Abstract not provided.
Overview of GaN Reliability Work at Sandia National Labs
Abstract not provided.
Deep level characterization: Electrical and optical methods
Abstract not provided.
Generation-After-Next Power Electronics Using Ultra-Wide-Bandgap Semiconductors
Abstract not provided.
Ultra-Wide-Bandgap Semiconductors for Generation-After-Next Power Electronics
Abstract not provided.
Scaling Power Electronic Converter SWaP Based on WBG and UWBG Device Characteristics
Abstract not provided.
Vertical GaN Devices for Power Electronics in Extreme Environments
Abstract not provided.
Generation-After-Next Power Electronics Using Ultra-Wide-Bandgap Semiconductors
Abstract not provided.
Results 201–225 of 339