Publications

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Microsystems-enabled photovoltaics (MEPVs) are microfabricated arrays of thin and efficient solar cells. The scaling effects enabled by this technique results in great potential to meet increasing demands for light-weight photovoltaic solutions with high power density. This paper covers failure analysis techniques used to support the development of MEPVs with a focus on the laser beam-based methods of LIVA, TIVA, OBIC, and SEI. Each FA technique is useful in different situations, and the examples in this paper show the relative advantages of each method for the failure analysis of MEPVs. Copyright © 2013 ASM International® All rights reserved.

Abstract not provided.

We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Electrostatic discharge (ESD) and electrical overstress (EOS) damage of Micro-Electro-Mechanical Systems (MEMS) has been identified as a new failure mode. This failure mode has not been previously recognized or addressed primarily due to the mechanical nature and functionality of these systems, as well as the physical failure signature that resembles stiction. Because many MEMS devices function by electrostatic actuation, the possibility of these devices not only being susceptible to ESD or EOS damage but also having a high probability of suffering catastrophic failure due to ESD or EOS is very real. Results from previous experiments have shown stationary comb fingers adhered to the ground plane on MEMS devices tested in shock, vibration, and benign environments. Using Sandia polysilicon microengines, we have conducted tests to establish and explain the ESD/EOS failure mechanism of MEMS devices. These devices were electronically and optically inspected prior to and after ESD and EOS testing. This paper will address the issues surrounding MEMS susceptibility to ESD and EOS damage as well as describe the experimental method and results found from ESD and EOS testing. The tests were conducted using conventional IC failure analysis and reliability assessment characterization tools. In this paper we will also present a thermal model to accurately depict the heat exchange between an electrostatic comb finger and the ground plane during an ESD event.

Abstract not provided.

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.

Two new failure analysis techniques have been developed for backside and front side localization of open and shorted interconnections on ICs. These scanning optical microscopy techniques take advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The methods utilize the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detect shorts. Initial investigations demonstrated the feasibility of TIVA and Seebeck Effect Imaging (SEI). Subsequent improvements have greatly increased the sensitivity of the TIVA/SEI system, reducing the acquisition times by more than 20X and localizing previously unobserved defects. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed. The system improvements, non-linear response of IC defects to heating, modeling of laser heating and examples using the improved system for failure analysis are presented.

Thermal modeling and simulations were used to analyze the thermal profiles of a polysilicon-metal test structure generated by thermally-induced voltage alteration (TIVA), a new laser-based failure analysis technique to localize shorted interconnects. The results show that variations in TIVA thermal profiles are due mainly to preferential laser absorption in various locations in the test structure. Differences in oxide thickness also affect the local heat conduction and temperature distribution. Modeling results also show that local variation in heat conduction is less important than the absorbed laser power in determining the local temperatures since our test structure has feature sizes that are small compared to the length over which heat spreads.

Scanning probe microscopy (SPM) techniques are not suitable as global defect-localization tools. They can, however, pinpoint the exact location of the defects once the approximate locations of the defects have been identified by other failure analysis techniques. SPM techniques also provide information such as 3-D topology, current, surface potential, and 2-D dopant profile that may not be readily obtainable with other techniques. This information, coupled with the unparalleled spatial resolution and high detection sensitivity can be used by failure analysts for root cause analysis.

Fluorescent microthermal imaging (FMI) involves coating a sample surface with a thin inorganic-based film that, upon exposure to uv light, emits temperature-dependent fluorescence. FMI offers the ability to create thermal maps of integrated circuits with a thermal resolution theoretically limited to 1 m{degree}C and a spatial resolution diffraction-limited to 0.3 {mu}m. Even though FMI has been in use for more than a decade, many factors that can affect the thermal image quality have not been studied well. This paper presents recent results showing the limitations from photon shot noise and the improvement in signal-to-noise ratio from signal averaging. Three important factors in film preparation and characterization are presented that have a significant impact on thermal quality and sensitivity of FMI: uv bleaching, film dilution, and film curing. It is shown how proper film preparation and data collection method can dramatically improve the quality of FMI thermal images.