Publications

Abstract not provided.

Biaxially oriented polyethylene terephthalate (BO-PET/Mylar®) polymer film is commonly used as the dielectric in high-voltage, pulse-discharge capacitors because of its high dielectric strength and insulation resistance over a wide temperature range [1]. This study focuses on the use of a systematic physics of failure (PoF) approach to assess possible design and fabrication problems in BO-PET capacitors. A destructive physical analysis (DPA) procedure, which is an essential technique in understanding the failure modes and mechanisms in capacitors, has been developed through this research. Short-term breakdown (STB) testing was performed on capacitors from two independent development builds and the results are compared. It was identified that the two primary failure mechanisms occurring in these capacitors under high voltage conditions were edge margin arc-over and dielectric punch-through. Evaluation of the electrical parameters after accelerated voltage testing revealed that the combination of lower than expected voltage breakdown values (near the voltage rating of 3.6 kV) and in-spec capacitance and dissipation factor (C/DF) values indicated an arc-over failure, while high voltage breakdown values (greater than 2.5 times the voltage rating) and out-of-spec C/DF values indicated a dielectric punch-through failure. Thick buried edges, creasing, high curvature, insufficient inactive wraps, arc spray, and inadequate edge margin were some of the modes that led to arc-over and punch-through failures. Many of these failure modes were traced back to unsuitably designed capacitors or issues with the process control during manufacturing.

Capacitors used in firing sets and other high discharge current applications are discharge tested to verify performance of the capacitor against the application requirements. Parameters such as capacitance, inductance, rise time, pulse width, peak current and current reversal must be verified to ensure that the capacitor will meet the application needs. This report summarizes an analysis performed on the discharge current data to extract these parameters by fitting a second-order system model to the discharge data and using this fit to determine the resulting performance metrics. Details of the theory and implementation are presented. Using the best-fit second-order system model to extract these metrics results in less sensitivity to noise in the measured data and allows for direct extraction of the total series resistance, inductance, and capacitance.

This report presents the results of an aging experiment that was established in FY09 and completed in FY10 for the Sandia MEMS Passive Shock Sensor. A total of 37 packages were aged at different temperatures and times, and were then tested after aging to determine functionality. Aging temperatures were selected at 100 C and 150 C, with times ranging from as short as 100 hours to as long as 1 year to simulate a predicted aging of up to 20 years. In all of the tests and controls, 100% of the devices continued to function normally.

This paper reviews the significant successes in MEMS products from a reliability perspective. MEMS reliability is challenging and can be device and process dependent, but exercising the proper reliability techniques very early in product development has yielded success for many manufacturers. The reliability concerns of various devices are discussed including ink jet printhead, inertial sensors, pressure sensors, micro-mirror arrays, and the emerging applications of RF switches and resonators. Metal contacting RF switches are susceptible to hydrocarbon contamination which can increase the contact resistance over cycle count. Packaging techniques are described in the context of the whole reliability program. © 2009 Elsevier Ltd.

Abstract not provided.

Shock testing was performed on a selected commercial-off-the-shelf - MicroElectroMechanical System (COTS-MEMS) accelerometer to determine the margin between the published absolute maximum rating for shock and the 'measured' level where failures are observed. The purpose of this testing is to provide baseline data for isolating failure mechanisms under shock and environmental loading in a representative device used or under consideration for use within systems and assemblies of the DOD/DOE weapons complex. The specific device chosen for this study was the AD22280 model of the ADXL78 MEMS Accelerometer manufactured by Analog Devices Inc. This study focuses only on the shock loading response of the device and provides the necessary data for adding influence of environmental exposure to the reliability of this class of devices. The published absolute maximum rating for acceleration in any axis was 4000 G for this device powered or unpowered. Results from this study showed first failures at 8000 G indicating a margin of error of two. Higher shock level testing indicated that an in-plane, but off-axis acceleration was more damaging than one in the sense direction.

Abstract not provided.

We have designed and fabricated a polysilicon sidewall-contact motion monitor that fits in between the teeth of a MEMS gear. The monitor has a center grounded member that is moved into contact with a pad held at voltage. When observing motion, however, the monitor fails after only a few actuations. A thorough investigation of the contacting interfaces revealed that for voltages > 5 V with a current limit of 100 pA, the main conduction process is Fowler-Nordheim tunneling. After a few switch cycles, the polysilicon interfaces became insulating. This is shown to be a permanent change and the suspected mechanism is field-induced oxidation of the asperity contacts. To reduce the effects of field-induced oxidation, tests were performed at 0.5 V and no permanent insulation was observed. However, the position of the two contacting surfaces produced three types of conduction processes: Fowler-Nordheim tunneling, ohmic, and insulator, which were observed in a random order during switch cycling. The alignment of contact asperities produced this positional effect.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF6. The self-limiting nature of this selective. We deposition process ensures the consistency necessary for process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. Tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. The wear resistance of selectively coated W parts has been shown to be significantly improved on microengine test structures.

Failure analysis (FA) tools have been applied to analyze tungsten coated polysilicon microengines. These devices were stressed under accelerated conditions at ambient temperatures and pressure. Preliminary results illustrating the failure modes of microengines operated under variable humidity and ultra-high drive frequency will also be shown. Analysis of tungsten coated microengines revealed the absence of wear debris in microengines operated under ambient conditions. Plan view imaging of these microengines using scanning electron microscopy (SEM) revealed no accumulation of wear debris on the surface of the gears or ground plane on microengines operated under standard laboratory conditions. Friction bearing surfaces were exposed and analyzed using the focused ion beam (FIB). These cross sections revealed no accumulation of debris along friction bearing surfaces. By using transmission electron microscopy (TEM) in conjunction with electron energy loss spectroscopy (EELS), we were able to identify the thickness, elemental analysis, and crystallographic properties of tungsten coated MEMS devices. Atomic force microscopy was also utilized to analyze the surface roughness of friction bearing surfaces.

Electrostatic discharge (ESD) and electrical overstress (EOS) damage of Micro-Electro-Mechanical Systems (MEMS) has been identified as a new failure mode. This failure mode has not been previously recognized or addressed primarily due to the mechanical nature and functionality of these systems, as well as the physical failure signature that resembles stiction. Because many MEMS devices function by electrostatic actuation, the possibility of these devices not only being susceptible to ESD or EOS damage but also having a high probability of suffering catastrophic failure due to ESD or EOS is very real. Results from previous experiments have shown stationary comb fingers adhered to the ground plane on MEMS devices tested in shock, vibration, and benign environments. Using Sandia polysilicon microengines, we have conducted tests to establish and explain the ESD/EOS failure mechanism of MEMS devices. These devices were electronically and optically inspected prior to and after ESD and EOS testing. This paper will address the issues surrounding MEMS susceptibility to ESD and EOS damage as well as describe the experimental method and results found from ESD and EOS testing. The tests were conducted using conventional IC failure analysis and reliability assessment characterization tools. In this paper we will also present a thermal model to accurately depict the heat exchange between an electrostatic comb finger and the ground plane during an ESD event.

Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

The burgeoning new technology of Micro-Electro-Mechanical Systems (MEMS) shows great promise in the weapons arena. We can now conceive of micro-gyros, micro-surety systems, and micro-navigators that are extremely small and inexpensive. Do we want to use this new technology in critical applications such as nuclear weapons? This question drove us to understand the reliability and failure mechanisms of silicon surface-micromachined MEMS. Development of a testing infrastructure was a crucial step to perform reliability experiments on MEMS devices and will be reported here. In addition, reliability test structures have been designed and characterized. Many experiments were performed to investigate failure modes and specifically those in different environments (humidity, temperature, shock, vibration, and storage). A predictive reliability model for wear of rubbing surfaces in microengines was developed. The root causes of failure for operating and non-operating MEMS are discussed. The major failure mechanism for operating MEMS was wear of the polysilicon rubbing surfaces. Reliability design rules for future MEMS devices are established.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF6. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.

MicroElectroMechanical Systems (MEMS) were subjected to a vibration environment that had a peak acceleration of 120 g and spanned frequencies from 20 to 2000 Hz. The device chosen for this test was a surface-micromachined microengine because it possesses many elements (springs, gears, rubbing surfaces) that may be susceptible to vibration. The microengines were unpowered during the test. We observed 2 vibration-related failures and 3 electrical failures out of 22 microengines tested. Surprisingly, the electrical failures also arose in four microengines in our control group indicating that they were not vibration related. Failure analysis revealed that the electrical failures were due to shorting of stationary comb fingers to the ground plane.

Over the past three years, several experiments have been conducted at the Brookhaven National Laboratory Radiation Effects Facility. These experiments have been investigations of proton induced radiation effects in individual electronic components, circuits, operational subsystems and full systems. Our investigations using 170--200 MeV protons have included total dose effects up to 12 Mrad, dose rate effects of the ionizing radiation in the 10{sup 5} to 10{sup 8} rad/s range, the displacement damage effects of the protons up to 10{sup 15} p/cm{sup 2}, and the proton induced thermal shift and thermal-rate effects. The target thickness of many test devices was an appreciable fraction of the range of 200 MeV protons. In our proton beam testing experiments at BNL, dosimetry placed downstream of the target consistently yielded higher dose in rad and in particle fluence than in dosimetry placed upstream of the target. We designed and performed an experiment to study this dose enhancement. The objective of the experiment was to determine the effect of sample thickness on our three methods of dosimetry. The data from the PIN diodes and tantalum calorimeters were consistent and followed the expected DE/DX curve. They show a dose enhancement effect. The proton beam interacts and loses energy as it travels through thick targets. The exiting lower energy beam deposits more energy into the dosimetry because the stopping power increases with decreasing proton energy.