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Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Advanced Materials

Talin, A.A.; Fuller, Elliot J.; Li, Yiyang; Marinella, Matthew J.; Sugar, Joshua D.; Bennett, Christopher H.; Bartsch, Michael B.; Horton, Robert D.; Yoo, Sangmin; Ashby, David; Lu, Wei D.

Digital computing is nearing its physical limits as computing needs and energy consumption rapidly increase. Analogue-memory-based neuromorphic computing can be orders of magnitude more energy efficient at data-intensive tasks like deep neural networks, but has been limited by the inaccurate and unpredictable switching of analogue resistive memory. Filamentary resistive random access memory (RRAM) suffers from stochastic switching due to the random kinetic motion of discrete defects in the nanometer-sized filament. In this work, this stochasticity is overcome by incorporating a solid electrolyte interlayer, in this case, yttria-stabilized zirconia (YSZ), toward eliminating filaments. Filament-free, bulk-RRAM cells instead store analogue states using the bulk point defect concentration, yielding predictable switching because the statistical ensemble behavior of oxygen vacancy defects is deterministic even when individual defects are stochastic. Both experiments and modeling show bulk-RRAM devices using TiO2-X switching layers and YSZ electrolytes yield deterministic and linear analogue switching for efficient inference and training. Bulk-RRAM solves many outstanding issues with memristor unpredictability that have inhibited commercialization, and can, therefore, enable unprecedented new applications for energy-efficient neuromorphic computing. Beyond RRAM, this work shows how harnessing bulk point defects in ionic materials can be used to engineer deterministic nanoelectronic materials and devices.

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Analog architectures for neural network acceleration based on non-volatile memory

Applied Physics Reviews

Xiao, Tianyao X.; Bennett, Christopher H.; Feinberg, Benjamin F.; Agarwal, Sapan A.; Marinella, Matthew J.

Analog hardware accelerators, which perform computation within a dense memory array, have the potential to overcome the major bottlenecks faced by digital hardware for data-heavy workloads such as deep learning. Exploiting the intrinsic computational advantages of memory arrays, however, has proven to be challenging principally due to the overhead imposed by the peripheral circuitry and due to the non-ideal properties of memory devices that play the role of the synapse. We review the existing implementations of these accelerators for deep supervised learning, organizing our discussion around the different levels of the accelerator design hierarchy, with an emphasis on circuits and architecture. We explore and consolidate the various approaches that have been proposed to address the critical challenges faced by analog accelerators, for both neural network inference and training, and highlight the key design trade-offs underlying these techniques.

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PANTHER: A Programmable Architecture for Neural Network Training Harnessing Energy-Efficient ReRAM

IEEE Transactions on Computers

Ankit, Aayush; El Hajj, Izzat; Agarwal, Sapan A.; Marinella, Matthew J.; Foltin, Martin; Strachan, John P.; Milojicic, Dejan; Hwu, Wen M.; Roy, Kaushik

The wide adoption of deep neural networks has been accompanied by ever-increasing energy and performance demands due to the expensive nature of training them. Numerous special-purpose architectures have been proposed to accelerate training: both digital and hybrid digital-analog using resistive RAM (ReRAM) crossbars. ReRAM-based accelerators have demonstrated the effectiveness of ReRAM crossbars at performing matrix-vector multiplication operations that are prevalent in training. However, they still suffer from inefficiency due to the use of serial reads and writes for performing the weight gradient and update step. A few works have demonstrated the possibility of performing outer products in crossbars, which can be used to realize the weight gradient and update step without the use of serial reads and writes. However, these works have been limited to low precision operations which are not sufficient for typical training workloads. Moreover, they have been confined to a limited set of training algorithms for fully-connected layers only. To address these limitations, we propose a bit-slicing technique for enhancing the precision of ReRAM-based outer products, which is substantially different from bit-slicing for matrix-vector multiplication only. We incorporate this technique into a crossbar architecture with three variants catered to different training algorithms. To evaluate our design on different types of layers in neural networks (fully-connected, convolutional, etc.) and training algorithms, we develop PANTHER, an ISA-programmable training accelerator with compiler support. Our design can also be integrated into other accelerators in the literature to enhance their efficiency. Our evaluation shows that PANTHER achieves up to 8.02×, 54.21×, and 103× energy reductions as well as 7.16×, 4.02×, and 16× execution time reductions compared to digital accelerators, ReRAM-based accelerators, and GPUs, respectively.

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Three Artificial Spintronic Leaky Integrate-and-Fire Neurons

SPIN

Brigner, Wesley H.; Hu, Xuan; Hassan, Naimul; Jiang-Wei, Lucian; Bennett, Christopher H.; Akinola, Otitoaleke; Pasquale, Massimo; Marinella, Matthew J.; Incorvia, Jean A.C.; Friedman, Joseph S.

Due to their nonvolatility and intrinsic current integration capabilities, spintronic devices that rely on domain wall (DW) motion through a free ferromagnetic track have garnered significant interest in the field of neuromorphic computing. Although a number of such devices have already been proposed, they require the use of external circuitry to implement several important neuronal behaviors. As such, they are likely to result in either a decrease in energy efficiency, an increase in fabrication complexity, or even both. To resolve this issue, we have proposed three individual neurons that are capable of performing these functionalities without the use of any external circuitry. To implement leaking, the first neuron uses a dipolar coupling field, the second uses an anisotropy gradient and the third uses shape variations of the DW track.

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Results 51–75 of 374
Results 51–75 of 374