Determining the Location and Size of Conductive Filaments in TaOx Memristive Devices Using Focused Ion Beam Irradiation
Abstract not provided.
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Jump to search filtersDetermining the Location and Size of Conductive Filaments in TaOx Memristive Devices Using Focused Ion Beam Irradiation
Abstract not provided.
Progress report of Sandia National Laboratories (SNL) contribu- tion to IAEA CRP F11016 on ?Utilization of ion accelerators for studying and modeling of radiation induced defects in semicon- ductors and insulators? 3rd RCM
This report presents the results of Sandia National Laboratories’ (SNL) contribution to IAEA CRP F11016 as mostly raw data. The goal of this CRP is to study the effects of radiation on semiconductors and insulators with the emphasis on the effect of displacement damage due to MeV energy ions on the performance of semiconductor detectors and microelectronic devices. SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, C-V measurements on devices used in the CRP, as well as calculating damage and ionization profiles for modeling.
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Using heavy ions to simulate displacement damage by neutron on microelectronic devices
Abstract not provided.
Mid-term progress report: CRP F11016
SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, CV measurements on devices used in the CRP, calculating damage and ionization profiles for modeling.
Characterization of Hamamatsu diodes TCAD modeling IBIC in undamaged Helsinki diodes
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing
Abstract not provided.
Radiation Effects Microscopy in Microelectronic devices Using a Heavy Ion Nuclear Microprob
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Radiation Testing Capability for Electronic Devices and Circuits at Sandia's Ion Beam Laboratory
Abstract not provided.
Localization of Conductive Filaments in TaOx Memristor using Focused Ion Beam Irradiation
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe
Abstract not provided.
Using heavy ions to simulate displacement damage by neutrons in microelectronic devices
Abstract not provided.
Radiation-Induced Resistance Changes in TaOx and TiO2 Memristors
Abstract not provided.
Potential Evidence for Post-Irradiation Defect Evolution Resulting in Enhanced Gain Degradation
Abstract not provided.
Progress report for CRP on Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators
Abstract not provided.
Radiation Effects on TaOx ReRAM: A Candidate for Rad-Hard Memory
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
Revisiting Recombination Current in Electron Ion and Neutron Damaged GaAs Diodes
Abstract not provided.
Results 126–150 of 194