Mid-term progress report: CRP F11016
SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, CV measurements on devices used in the CRP, calculating damage and ionization profiles for modeling.
Publications
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Jump to search filtersCharacterization of Hamamatsu diodes TCAD modeling IBIC in undamaged Helsinki diodes
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing
Abstract not provided.
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in TaOx Memristors
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Radiation Effects Microscopy in Microelectronic devices Using a Heavy Ion Nuclear Microprob
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
Localization of Conductive Filaments in TaOx Memristor using Focused Ion Beam Irradiation
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe
Abstract not provided.
Using heavy ions to simulate displacement damage by neutrons in microelectronic devices
Abstract not provided.
Potential Evidence for Post-Irradiation Defect Evolution Resulting in Enhanced Gain Degradation
Abstract not provided.
Progress report for CRP on Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
Revisiting Recombination Current in Electron Ion and Neutron Damaged GaAs Diodes
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
Simulation of ion-solid interactions using Binary Collision Approximation
Abstract not provided.
Radiation Effects in Microelectronic Devices
Abstract not provided.
Investigation of ion beam induced radiation damage in Si diodes
Proposed for publication in Nuclear Instruments and Methods B.
Abstract not provided.
Investigation of ion beam induced radiation damage in Si PN diodes
Abstract not provided.
The Messenger-Spratt relation
Abstract not provided.
SOI substrate removal for SEE characterization: Techniques and applications
IEEE Transactions on Nuclear Science
Techniques for removing the back substrate of SOI devices are described for both packaged devices and devices at the die level. The use of these techniques for microbeam, heavy-ion, and laser testing are illustrated. © 2012 IEEE.
Investigation of Ion Induced Radiation Effects in Semiconductor Device IAEA CRP #11016 SNL's approach and potential contribution
Abstract not provided.
Simulation of ion beam induced current in radiation detectors and microelectronic devices
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Ion Beam Induced Charge (IBIC) is the basic mechanism of the operation of semiconductor detectors and it can lead to Single Event Effects (SEEs) in microelectronic devices. To be able to predict SEEs in ICs and detector responses one needs to be able to simulate the radiation-induced current as the function of time on the electrodes of the devices and detectors. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. Technology Computer Aided Design (TCAD) programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. Here a simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework, version 3.5. In the model, the induced current can be calculated both directly and in certain cases using the powerful adjoint method. A brief description of the model will be given in the paper with examples for detectors and microelectronic devices using both the direct and the adjoint method.
Results 126–150 of 175