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Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories

Brennecka, Geoffrey L.; Stevens, Jeffrey S.; Gin, Aaron G.; Scrymgeour, David S.

Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

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RF/microwave properties of nanotubes and nanowires : LDRD Project 105876 final report

Lee, Mark L.; Highstrete, Clark H.; Hsu, Julia W.; Scrymgeour, David S.

LDRD Project 105876 was a research project whose primary goal was to discover the currently unknown science underlying the basic linear and nonlinear electrodynamic response of nanotubes and nanowires in a manner that will support future efforts aimed at converting forefront nanoscience into innovative new high-frequency nanodevices. The project involved experimental and theoretical efforts to discover and understand high frequency (MHz through tens of GHz) electrodynamic response properties of nanomaterials, emphasizing nanowires of silicon, zinc oxide, and carbon nanotubes. While there is much research on DC electrical properties of nanowires, electrodynamic characteristics still represent a major new frontier in nanotechnology. We generated world-leading insight into how the low dimensionality of these nanomaterials yields sometimes desirable and sometimes problematic high-frequency properties that are outside standard model electron dynamics. In the cases of silicon nanowires and carbon nanotubes, evidence of strong disorder or glass-like charge dynamics was measured, indicating that these materials still suffer from serious inhomogeneities that limit there high frequency performance. Zinc oxide nanowires were found to obey conventional Drude dynamics. In all cases, a significant practical problem involving large impedance mismatch between the high intrinsic impedance of all nanowires and nanotubes and high-frequency test equipment had to be overcome.

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Correlated piezoelectric and electrical properties in individual ZnO nanorods

Nano Letters

Scrymgeour, David S.; Hsu, Julia W.

Resistivity and piezoelectric response of individual ZnO nanorods were measured using scanning force microscopy. We found a variation in resistivity of 3 orders of magnitude, from 0.1 to 155 Ωcm and in piezoelectric coefficient ranging from 0.4 to 9.5 pm/V in ZnO nanorods grown from solution at the same time on the same substrate. However, there exists a clear correlation between these two properties: nanorods with low piezoelectric response display low resistivity. The relationship is explained by the reduction of the Madelung constant due to free electrons. The results highlight that slight differences in the local environment during synthesis can cause large variation in physical properties found among similar nanostructures. These variations cannot be revealed through ensemble measurements and may contribute to the confusion in the literature of individual nanostructure properties. We demonstrate that correlating multiple physical properties on individual nanostructures provides an insight into the origin of the varying physical properties. © 2008 American Chemical Society.

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Results 101–120 of 120
Results 101–120 of 120