Vertical GaN Power Electronics - Opportunities and Challenges (invited)
Abstract not provided.
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Jump to search filtersEtched and Regrown Vertical GaN Junction Barrier Schottky Diodes
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V was achieved at 1 mA reverse leakage, with a sub 1 V turn-on and a specific on-resistance of 10 mΩ-cm2. This result is compared to other reported JBS devices in the literature and our device demonstrates the lowest leakage slope at high reverse bias. A large initial leakage current is present near zero-bias which is attributed to a combination of inadequate etch-damage removal and passivation induced leakage current.
On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode under Unclamped Inductive Switching Stress
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
This work reports an on-wafer study of avalanche behavior and failure analysis of in-house fabricated 1.3 kV GaN-on-GaN P-N diodes. DC breakdown is measured at different temperatures to confirm avalanche behavior. Diode's avalanche ruggedness is measured directly on-wafer using a modified unclamped inductive switching (UIS) test set-up with an integrated thermal chuck and high-speed CCD for real-time imaging during the test. The avalanche ruggedness of the GaN P-N diode is evaluated and compared with a commercial SiC Schottky diode of similar voltage and current rating. Failure analysis is done using SEM and optical microscopy to gain insight into the diode's failure mechanism during avalanche operation.
Development of High-Voltage Vertical GaN PN Diodes (invited)
Abstract not provided.
Development of High-Voltage Vertical GaN PN Diodes (invited)
Abstract not provided.
Dependence of Critical Electric Field on Semiconductor Bandgap - An Analytical Study
Abstract not provided.
Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems
Abstract not provided.
Development of High-Voltage Vertical GaN PN Diodes (invited)
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Reliability Studies of Wide-Bandgap Power Semiconductor Devices Under Realistic Stress Conditions
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Development of High-Voltage Vertical GaN PN Diodes (invited)
Abstract not provided.
Material Challenges of AlGaN PN Diodes for Power Electronics (invited)
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ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices
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Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors
Abstract not provided.
Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
Proper edge termination is required to reach large blocking voltages in vertical power devices. Limitations in selective area p-type doping in GaN restrict the types of structures that can be used for this purpose. A junction termination extension (JTE) can be employed to reduce field crowding at the junction periphery where the charge in the JTE is designed to sink the critical electric field lines at breakdown. One practical way to fabricate this structure in GaN is by a step-etched single-zone or multi-zone JTE where the etch depths and doping levels are used to control the charge in the JTE. The multi-zone JTE is beneficial for increasing the process window and allowing for more variability in parameter changes while still maintaining a designed percentage of the ideal breakdown voltage. Impact ionization parameters reported in literature for GaN are compared in a simulation study to ascertain the dependence on breakdown performance. Two 3-zone JTE designs utilizing different impact ionization coefficients are compared. Simulations confirm that the choice of impact ionization parameters affects both the predicted breakdown of the device as well as the fabrication process variation tolerance for a multi-zone JTE. Regardless of the impact ionization coefficients utilized, a step-etched JTE has the potential to provide an efficient, controllable edge termination design.
Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications
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AlGaN HEMT Logic for Extreme Temperature Operation
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Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs
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Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes
Abstract not provided.
Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors
Abstract not provided.
Ultra-Wide Bandgap Al-Rich AlGaN Alloys for Power Diodes and Transistors (invited)
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride for High-Performance Power-Switching and Radio-Frequency Devices (invited)
Abstract not provided.
Bevel Edge Termination for Vertical GaN Power Diodes
Abstract not provided.
Analysis of the Dependence of Critical Electric Field on Semiconductor Bandgap (invited)
Abstract not provided.
Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs
Abstract not provided.
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