Publications

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We implemented a vacuum field emission electron microscope (FEM) using the electron optics of a low-energy /photoemission electron microscope (LEEM/PEEM). Historically, there have been other FEM hardware platforms, and the distinctive feature of our method is that it integrates with the LEEM/PEEM and associated techniques, enabling a powerful multi-capability toolset for studying fundamental materials properties underpinning field emission (FE) and vacuum arc initiation. Typically, LEEM is used to image surface structure, which influences both work function and electric field distribution near a surface, while PEEM is used to map photoelectric work function across a surface. Our FEM adds the capability for spatially-correlated coincident-site measurements of FE currents to go-along with structure and work function. LEEM, PEEM, and our FEM implementation achieve nanoscale spatial resolution relevant for materials studies in nanoscience/engineering. Our approach requires a straightforward calibration of the electron optics to enable focused FEM imaging under intentional electric field variation. We demonstrate the FEM approach by imaging field emitter arrays relevant for vacuum nanoelectronics. We demonstrate submicron spatial resolution and dynamic measurement of FE versus applied electric field. We anticipate this capability will enable fundamental structure-function studies of FE and arc initiation.

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3D Particle-In-Cell Direct Simulation Monte Carlo (PIC-DSMC) simulations of cm-sized devices cannot resolve atomic-scale (nm) surface features and thus one must generate micron-scale models for an effective “local” work function, field enhancement factor, and emission area. Here we report on development of a stochastic effective model based on atomic-scale characterization of as-built electrode surfaces. Representative probability density distributions of the work function and geometric field enhancement factor (beta) for a sputter-deposited Pt surface are generated from atomic-scale surface characterization using Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM), and Photoemission Electron Microscopy (PEEM). In the micron-scale model every simulated PIC-DSMC surface element draws work functions and betas for many independent “atomic emitters”. During the simulation the field emitted current from an element is computed by summing each “atomic emitter's” current. This model has reasonable agreement with measured micron-scale emitted currents across a range of electric field values.

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By combining optical imaging, Raman spectroscopy, kelvin probe force microscopy (KFPM), and photoemission electron microscopy (PEEM), we show that graphene's layer orientation, as well as layer thickness, measurably changes the surface potential (Φ). Detailed mapping of variable-thickness, rotationally-faulted graphene films allows us to correlate Φ with specific morphological features. Using KPFM and PEEM we measure ΔΦ up to 39 mV for layers with different twist angles, while ΔΦ ranges from 36-129 mV for different layer thicknesses. The surface potential between different twist angles or layer thicknesses is measured at the KPFM instrument resolution of ≤ 200 nm. The PEEM measured work function of 4.4 eV for graphene is consistent with doping levels on the order of 1012cm-2. We find that Φ scales linearly with Raman G-peak wavenumber shift (slope = 22.2 mV/cm-1) for all layers and twist angles, which is consistent with doping-dependent changes to graphene's Fermi energy in the 'high' doping limit. Our results here emphasize that layer orientation is equally important as layer thickness when designing multilayer two-dimensional systems where surface potential is considered.

In recent years, an increasing number of memory and spintronic devices have been developed exploiting the combination of ferromagnetic (FM) and anti-ferromagnetic (aFM) materials. Consequently, magnetic imaging based on continuous-wave (CW) ultraviolet (UV) (λ = 266nm and longer wavelength) photoemission electron microscopy (PEEM) is gaining considerable attention due to the possibility of determining magnetizations for FM and aFM materials with 10 nm lateral resolution at video rate image acquisition. This PEEM-based approach exploits the polarization-dependent photoemission yield, which is subject to the polarization vector and the FM or aFM magnetization direction. Because of this unique attribute, magnetic imaging using PEEM when coupled to a laser with multiple illumination geometries allows for characterizing in-plane and out-of-plane magnetizations. This concept, however, has not been tested using a deep-UV laser (λ = 213nm), which has a much broader application space than the longer wavelength excitation used in previous reports. The purpose of this project in FY17 was to show the proof-of-concept of magnetic circular dichroism (MCD)-PEEM imaging using a λ = 210nm pulsed laser. Our results demonstrated the feasibility of in-plane and out-of-plane magnetic imaging with the limitations in the lateral resolution, data acquisition time, and signal-to-noise ratio anticipated for using a pulsed laser of moderate power. The project goal for FY18 is to construct the automated polarization-controlled data acquisition, and to establish the new lab facility in anticipation of acquiring a state-of-the-art high-power 213nm CW laser, planned to be installed in FY19. We successfully demonstrate the former by measuring dielectric stacks with polarization-dependent photoemission yield. Extrapolating from our result, we conclude that the capability of PEEM-based magnetic imaging using a CW deep UV laser could be a potential game-changer for scientific investigations and technological developments of magnetic materials and spintronic devices. In addition, polarization controlled PEEM imaging shows the potential for ellipsometry imaging of embedded nanomaterials exploiting their subtle differences in optical constants with respect to their surrounding dielectrics.

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