Sort by Date
Sort by Title
Standard Format
Show Abstracts
As Citations (APA)
Search results
Jump to search filters
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Watts, Michael W. ; Zortman, William ; Trotter, Douglas C.; Nielson, Gregory N. ; Luck, David L.; Young, Ralph W.
A new class of microphotonic-resonators, Adiabatic Resonant Microrings (ARMs), is introduced. The ARM resonator geometry enables heater elements to be formed within the resonator, simultaneously enabling record low-power (4.4μW/GHz) and record high-speed (1μs) thermal tuning. ©2009 Optical Society of America.
Cruz-Campa, Jose L. ; Pluym, Tammy ; Resnick, Paul ; Young, Ralph W. ; Clews, Peggy J. ; Okandan, Murat ; Grubbs, Robert K. ; Nielson, Gregory N.
Lentine, Anthony L. ; Young, Ralph W.
Lentine, Anthony L. ; Young, Ralph W. ; Zortman, William
Young, Ralph W. ; Lentine, Anthony L. ; Zortman, William
Young, Ralph W. ; Lentine, Anthony L. ; Watts, Michael W.
Muller, Richard P. ; Carroll, M.S. ; Young, Ralph W. ; Sears, Mark P. ; Lilly, Michael ; Eng, Kevin E. ; Tracy, Lisa A.
Young, Ralph W. ; Lentine, Anthony L.
Nature Photonics
Young, Ralph W. ; Lentine, Anthony L.
Gurrieri, Thomas ; Carroll, M.S. ; Childs, Kenton D. ; Hamlet, Jason ; Young, Ralph W. ; Akinnikawe, Erin M. ; Levy, James E. ; Kim, Jin K. ; Lilly, Michael
Lentine, Anthony L. ; Watts, Michael W. ; Davids, Paul ; Young, Ralph W.
Young, Ralph W.
We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3 {micro}m radii active microdisks possesses {approx}40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time.
Optics InfoBase Conference Papers
Watts, Michael R.; Trotter, Douglas C.; Young, Ralph W.
We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3μm radii active microdisks possesses ~40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time. © 2008 Optical Society of America.
Atherton, B. ; Gonzales, Rita A. ; Gurrieri, Thomas ; Herrmann, Mark H. ; Mulville, Thomas D. ; Neely, Kelly A. ; Rambo, Patrick K. ; Rovang, Dean C. ; Ruggles, Larry ; Smith, Ian C. ; Schwarz, Jens ; Simpson, Walter W. ; Sinars, Daniel ; Speas, Christopher S. ; Tafoya-Porras, Belinda T. ; Wenger, D.F. ; Young, Ralph W. ; Adams, Richard G. ; Bennett, Guy R. ; Campbell, David V. ; Carroll, M.S. ; Claus, Liam ; Edens, Aaron ; Geissel, Matthias
Gonzales, Rita A. ; Gurrieri, Thomas ; Herrmann, Mark H. ; Mulville, Thomas D. ; Neely, Kelly A. ; Rambo, Patrick K. ; Rovang, Dean C. ; Ruggles, Larry ; Schwarz, Jens ; Adams, Richard G. ; Simpson, Walter W. ; Sinars, Daniel ; Smith, Ian C. ; Speas, Christopher S. ; Tafoya-Porras, Belinda T. ; Wenger, D.F. ; Young, Ralph W. ; Edens, Aaron ; Atherton, B. ; Bennett, Guy R. ; Campbell, David V. ; Carroll, M.S. ; Claus, Liam ; Geissel, Matthias
Proposed for publication in Applied Physics Letters.
Nakakura, Craig Y. ; Young, Ralph W. ; Okandan, Murat ; Draper, Bruce L. ; Dyck, Meredith L.
Proposed for publication in the IEEE Transactions on Nuclear Science.
Draper, Bruce L. ; Shaneyfelt, Marty R. ; Young, Ralph W. ; Headley, Thomas J. ; Dondero, Richard
Under conditions that were predicted as 'safe' by well-established TCAD packages, radiation hardness can still be significantly degraded by a few lucky arsenic ions reaching the gate oxide during self-aligned CMOS source/drain ion implantation. The most likely explanation is that both oxide traps and interface traps are created when ions penetrate and damage the gate oxide after channeling or traveling along polysilicon grain boundaries during the implantation process.
Results 51–67 of 67
25 Results per page
50 Results per page
100 Results per page
200 Results per page