Multi-Layered Solid-State Neutron Sensor
Abstract not provided.
Publications
Multi-Layered Solid-State Neutron Sensor
Abstract not provided.
Fabrication techniques for heterogenous integration of 2.5-D Systems
Abstract not provided.
Multi-Layered Solid State Neutron Sensor
Abstract not provided.
Hyper Temporal Sensor Accomplishments
Abstract not provided.
Failure Analysis and Process Verification of High Density Copper ICs
Abstract not provided.
Failure analysis and process verification of high density copper ICs used in multi-chip modules (MCM)
Conference Proceedings from the International Symposium for Testing and Failure Analysis
Manufacturing of integrated circuits (ICs) using a split foundry process expands design space in IC fabrication by employing unique capabilities of multiple foundries and provides added security for IC designers [1] Defect localization and root cause analysis is critical to failure identification and implementation of corrective actions. In addition to split-foundry fabrication, the device addressed in this publication is .comprised of 8 metal layers, aluminum test pads, and tungsten thru-silicon vias (TSVs) making the circuit area > 68% metal. This manuscript addresses the failure analysis efforts involved in root cause analysis, failure analysis findings, and the corrective actions implemented to eliminate these failure mechanisms from occurring in future product.
3D IC?s For Space Applications
Abstract not provided.
Atomistic simulations of coherent tunneling adiabatic passage in an imperfect donor chain
Abstract not provided.
Cryogenic CMOS circuits for single charge digital readout
Abstract not provided.
Brief Announcement: The Impact of Classical Electronics Constraints on a Solid-State Logical Qubit Memory
Abstract not provided.
CMOS Integrated single electron transistor electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes standard submicron (0.35um) CMOS SOI technology using room temperature SPICE models. Implications and uncertainties related to the temperature scaling of these models to 100mK operation are discussed. Using this technology, the simulations predict a read-out operation speed of approximately 1ns and a power dissipation per cell as low as 2nW for single-shot read-out, which is a significant advantage over currently used radio frequency SET (RF-SET) approaches. © 2008 IEEE.
Steps toward on chip integration of single electron devices with CMOS electronics
Abstract not provided.
13 Results