Materials Challenges of AlGaN-Based Power Electronics and UV Lasers (invited)
Abstract not provided.
Publications
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Jump to search filtersUltra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited)
Abstract not provided.
High Breakdown (>3000 V) Al0.3Ga0.7N PiN Diodes
Abstract not provided.
The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices
Abstract not provided.
Vertical AlxGa1-xN(x=0.3 and x=0.7) PiN Diodes for Power Electronics Applications
Abstract not provided.
Laser diodes with 353nm wavelength enabled by reduced-dislocation-density AlGaN templates
Applied Physics Express
We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2-3) × 108cm%2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34kW/cm2 at 346 nm. Roomtemperature pulsed operation of laser diodes at 353nm was demonstrated, with a threshold of 22.5 kA/cm2. Reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.
350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates
2015 IEEE Summer Topicals Meeting Series, SUM 2015
Realization of efficient laser diodes with ultra-violet (UV) emission from ∼260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ∼370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission < 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3]
352-nm Laser Diodes Enabled by Low-Dislocation-Density AlGaN Templates
Abstract not provided.
Low-Dislocation-Density AlGaN Templates for UV Laser Diodes (invited)
Abstract not provided.
Connection between GaN and InGaN Growth Mechanisms and Surface Morphology
Journal of Crystal Growth
Abstract not provided.
Characterization of III-Nitride Nanowires
Abstract not provided.
Polarization Switching in GaN Nanowire Lasers
Applied Physics Letters
Abstract not provided.
Quantifying Surface Mounding of GaN and InGaN Thin Films
Abstract not provided.
Material and Device Development of AlGaN Based Deep UV Emitters
Abstract not provided.
Polarization and Modal Control of GaN Nanowire Lasers
Abstract not provided.
Using Dilute Hydrogen Flows to Tailor Indium Incorporation during InGaN Growth
Abstract not provided.
Polarization Manipulation of GaN Nanowire Lasers
Abstract not provided.
Mode Control in Gallium Nitride Nanowire Lasers
Abstract not provided.
Polarization Properties of GaN Nanowire Lasers
Abstract not provided.
Gold Substrate-Induced Single-Mode Lasing of GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques
Abstract not provided.
Single-Mode GaN Nanowire Lasers
Abstract not provided.
Single Mode GaN Nanowire Lasers
Abstract not provided.
Steps Toward Understanding the Growth and Physics of Visible Group III-N LEDs (invited)
Abstract not provided.
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