Publications

Abstract not provided.

Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Abstract not provided.

Abstract not provided.

The verdict is in: the methods of science can significantly enhance the effectiveness of creative teams. Just ask employers like Google and Facebook who are applying ideas from the social sciences to improve the performance of their organizations.1 Over the last few decades, social scientists, including psychologists, sociologists and anthropologists, have made important strides in developing a scientific understanding of how creative individuals and creative communities operate.

The authors, Jeffrey Y. Tsao, Jung Han, Roland H. Haitz, and P. Morgan Pattison, on behalf of a large and growing community of scientists and technologists working in III-N semiconductor materials, physics and devices, and of users of the applications they enable congratulate Professors Akasaki, Amano and Nakamura (AAN). The path that connects scientific understanding with tools and technologies is rarely linear. Prevailing scientific understanding often enables and unleashes new tools and technologies. But prevailing scientific understanding is imperfect, and technology researchers must often step, as did AAN, outside its confines for their breakthroughs. the importance of technology breakthroughs is particularly evident in semiconductors: in recent decades, more and more Physics Nobel Prizes have been awarded for technology breakthroughs, and of these by far the most have been for semiconductors.

Abstract not provided.

Abstract not provided.

We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately the self-limiting etch kinetics lead to an ensemble of nanoparticles. This change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Solid-state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light-emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state-of-the-art input-power-density-dependent power-conversion efficiencies; potential improvements both in their peak power-conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

This white paper makes a case for Sandia National Laboratories investments in complex adaptive systems science and technology (S&T) -- investments that could enable higher-value-added and more-robustly-engineered solutions to challenges of importance to Sandia's national security mission and to the nation. Complex adaptive systems are ubiquitous in Sandia's national security mission areas. We often ignore the adaptive complexity of these systems by narrowing our 'aperture of concern' to systems or subsystems with a limited range of function exposed to a limited range of environments over limited periods of time. But by widening our aperture of concern we could increase our impact considerably. To do so, the science and technology of complex adaptive systems must mature considerably. Despite an explosion of interest outside of Sandia, however, that science and technology is still in its youth. What has been missing is contact with real (rather than model) systems and real domain-area detail. With its center-of-gravity as an engineering laboratory, Sandia's has made considerable progress applying existing science and technology to real complex adaptive systems. It has focused much less, however, on advancing the science and technology itself. But its close contact with real systems and real domain-area detail represents a powerful strength with which to help complex adaptive systems science and technology mature. Sandia is thus both a prime beneficiary of, as well as potentially a prime contributor to, complex adaptive systems science and technology. Building a productive program in complex adaptive systems science and technology at Sandia will not be trivial, but a credible path can be envisioned: in the short run, continue to apply existing science and technology to real domain-area complex adaptive systems; in the medium run, jump-start the creation of new science and technology capability through Sandia's Laboratory Directed Research and Development program; and in the long run, inculcate an awareness at the Department of Energy of the importance of supporting complex adaptive systems science through its Office of Science.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

In 1957, Sandia National Laboratories (Sandia) initiated its first programs in fundamental science, in support of its primary nuclear weapons mission. In 1974, Sandia initiated programs in fundamental science supported by the Department of Energy's Office of Science (DOE-SC). These latter programs have grown to the point where, today in 2011, support of Sandia's programs in fundamental science is dominated by that Office. In comparison with Sandia's programs in technology and mission applications, however, Sandia's programs in fundamental science are small. Hence, Sandia's fundamental science has been strongly influenced by close interactions with technology and mission applications. In many instances, these interactions have been of great mutual benefit, with synergies akin to a positive 'Casimir's spiral' of progress. In this report, we review the history of Sandia's fundamental science programs supported by the Office of Science. We present: (a) a technical and budgetary snapshot of Sandia's current programs supported by the various suboffices within DOE-SC; (b) statistics of highly-cited articles supported by DOE-SC; (c) four case studies (ion-solid interactions, combustion science, compound semiconductors, advanced computing) with an emphasis on mutually beneficial interactions between science, technology, and mission; and (d) appendices with key memos and reminiscences related to fundamental science at Sandia.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.