Publications

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In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration.

In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration.

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Holes in germanium-rich heterostructures provide a compelling alternative for achieving spin based qubits compared to traditional approaches such as electrons in silicon. In this project, we addressed the question of whether holes in Ge/SiGe quantum wells can be confined into laterally defined quantum dots and made into qubits. Through this effort, we successfully fabricated and operated single-metal-layer quantum dot devices in Ge/SiGe in multiple devices. For single quantum dots, we measured the capacitances of the quantum dot to the surface electrodes and find that they reasonably compare to expected values based on the electrode dimensions, suggested that we have formed a lithographic quantum dot. We also compare the results to detailed self-consistent calculations of the expected potential. Finally, we demonstrate, for the first time, a double quantum dot in the Ge/SiGe material system.

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Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

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We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

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This the final report of the LDRD project entitled "Realizing the Power of Near-Term Quantum Technologies", which was tasked with laying a theoretical foundation and computational framework for quantum simulation on quantum devices, to support both future Sandia efforts and the broader academic research effort in this area. The unifying theme of the project has been the desire to delineate more clearly the interface between existent classical computing resources that are vast and reliable with emerging quantum computing resources that will be scarce and unreliable for the foreseeable future. We seek to utilize classical computing resources to judge the efficacy of quantum devices for quantum simulation tasks and determine when they exceed the performance of classical devices, thereby achieving "quantum supremacy". This task was initially pursued by adapting the general concept of "parameter space compression" to quantum simulation. An inability to scale this analysis efficiently to large-scale simulations precipitated a shift in focus to assessing quantum supremacy of a specific quantum device, a 1D Bose gas trapped in an optical lattice, that was more amenable to large-scale analysis. We also seek to reconstruct unobserved information from limited observations of a quantum device to enhance their utility. This task was initially pursued as an application of maximum entropy reconstruction. Initial attempts to improve entropy approximations for direct reconstruction by free energy minimization proved to be more difficult than expected, and the focus shifted to the development of a quantum thermostat to facilitate indirect reconstruction by evolving a quantum Markov process. An efficient quantum thermostat is broadly useful for quantum state preparation in almost any quantum simulation task. In the middle of the project, a small opportunistic investment was made in a high-risk experiment to build an analog quantum simulator out of hole quantum dots in Ge/SiGe heterostructures. While a useful simulator was not produced, hole quantum dots at a Ge/SiGe interface have been successfully observed for the first time.

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