AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 109 and 6 × 103 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.
Research results for AlGaN-channel transistors are reviewed as they have progressed from low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of merit (FOM) analysis shows encouraging comparisons relative to today's state-of-the-art GaN devices for high Al-content and elevated temperatures. Critical electric field (EC), which fuels the AlGaN transistor FOM for high Al-composition, is not measured directly, but average gate-drain electric field at breakdown is substantially better in multiple reported AlGaN-channel devices compared to GaN. Challenges for AlGaN include the constraints arising from relatively low room temperature mobility dominated by ternary alloy scattering and the difficulty of making low-resistivity Ohmic contacts to high Al-content materials. Nevertheless, considerable progress has been made recently in the formation of low-resistivity Ohmic contacts to Al-rich AlGaN by using reverse compositional grading in the semiconductor, whereby a contact to a lower-Al alloy (or even to GaN) is made. Specific contact resistivity (ρc) approaching ρc ∼2 × 10-6ωcm2 to AlGaN devices with 70% Al-content in the channel has been reported. Along with scaling of the channel length and tailoring of the threshold voltage, this has enabled a dramatic increase in the current density, which has now reached 0.6 A/mm. Excellent ION/IOFF current ratios have been reported for Schottky-gated structures, in some cases exceeding 109. Encouraging RF performance in Al-rich transistors has been reported as well, with fT and fmax demonstrated in the tens of gigahertz range for devices with less than 150 nm gates. Al-rich transistors have also shown lesser current degradation over temperature than GaN in extreme high-temperature environments up to 500 °C, while maintaining ION/IOFF ratios of ∼106 at 500 °C. Finally, enhancement-mode devices along with initial reliability and radiation results have been reported for Al-rich AlGaN transistors. The Al-rich transistors promise to be a very broad and exciting field with much more progress expected in the coming years as this technology matures.
Gate length dependent (80 nm–5000 mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450 nm. Transconductance varied from 10 mS/mm to 25 mS/mm, with the 450 nm device having the highest values. Maximum drain current density was 268 mA/mm at 10 V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth (fT) of 28 GHz, achieved by the 80 nm gate length device. A saturation velocity value of 3.8 × 106 cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the fT measurements.
AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible- and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination. This opto-electronic response achieved responsivity > 108 A/W at room temperature while allowing HEMTs to be electrically biased in the offstate for low dark current and low DC power dissipation. The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated, along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity. The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer, thus enabling the same device design to be tuned for either visible- or solar-blind detection.
Enhancement-mode Al0.7Ga0.3N-channel high electron mobility transistors (HEMTs) were achieved through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (VTH) relative to depletion-mode devices by +5.6 V to VTH = +0.5 V. Accounting for the threshold voltage shift (ΔVTH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10-3mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔVTH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.
This work exhibits the ability to shift the threshold voltage of an Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al0.3Ga0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high ION,MAX/IOFF,MIN ratio of >109, and exceptionally low gate leakage current of 10-6 mA/mm even under high forward bias of Vgs = 8 V.
We present heavy ion and proton data on AlGaN high-voltage HEMTs showing single event burnout (SEB), total ionizing dose, and displacement damage responses. These are the first such data for materials of this type. Two different designs of the epitaxial structure were tested for SEB. The default layout design showed burnout voltages that decreased rapidly with increasing LET, falling to about 25% of nominal breakdown voltage for ions with LET of about 34 MeV · cm2/mg for both structures. Samples of the device structure with lower AlN content were tested with varying gate-drain spacing and revealed an improved robustness to heavy ions, resulting in burnout voltages that did not decrease up to at least 33.9 MeV · cm2/mg. Failure analysis showed that there was consistently a point, location random, where gate and drain had been shorted. Oscilloscope traces of terminal voltages and currents during burnout events lend support to the hypothesis that burnout events begin with a heavy ion strike in the vulnerable region between gate and drain. This subsequently initiates a cascade of events resulting in damage that is largely manifested elsewhere in the device. This hypothesis also suggests a path for greatly improving the susceptibility to SEB as development of this technology goes forward. Testing with 2.5-MeV protons showed only minor changes in device characteristics.
Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.
This chapter discusses the motivation for the use of Ultra-Wide-Bandgap Aluminum Gallium Nitride semiconductors for power switching and radio-frequency applications. A review of the relevant figures of merit for both vertical and lateral power switching devices, as well as lateral radio-frequency devices, is presented, demonstrating the potential superior performance of these devices relative to Gallium Nitride. Additionally, representative results from the literature for each device type are reviewed, highlighting recent progress as well as areas for further research.
In this paper, we present heavy ion and proton data on AlGaN highvoltage HEMTs showing Single Event Burnout, Total Ionizing Dose, and Displacement Damage responses. These are the first such data for materials of this type. Two different designs of the epitaxial structure were tested for Single Event Burnout (SEB). The default layout design showed burnout voltages that decreased rapidly with increasing LET, falling to about 25% of nominal breakdown voltage for ions with LET of about 34 MeV·cm2/mg for both structures. Samples of the device structure with lower AlN content were tested with varying gate-drain spacing and revealed an improved robustness to heavy ions, resulting in burnout voltages that did not decrease up to at least 33.9 MeV·cm2/mg. Failure analysis showed there was consistently a point, location random, where gate and drain had been shorted. Oscilloscope traces of terminal voltages and currents during burnout events lend support to the hypothesis that burnout events begin with a heavy ion strike in the vulnerable region between gate and drain. This subsequently initiates a cascade of events resulting in damage that is largely manifested elsewhere in the device. This hypothesis also suggests a path for greatly improving the susceptibility to SEB as development of this technology goes forward. Lastly, testing with 2.5 MeV protons showed only minor changes in device characteristics.
Here, Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance (Ron-sp) from 1.5 to 60.7 mΩ cm2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm2. This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al0.26Ga0.74N/GaN lateral structure.