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Parallel Matrix Multiplication Using Voltage-Controlled Magnetic Anisotropy Domain Wall Logic

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Zogbi, Nicholas; Liu, Samuel; Bennett, Christopher; Agarwal, Sapan; Marinella, Matthew J.; Incorvia, Jean A.C.; Xiao, Tianyao P.

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage-controlled magnetic anisotropy (VCMA) to improve the reliability of logical concatenation in the presence of realistic process variations. VCMA creates potential wells that allow for reliable and repeatable localization of domain walls (DWs). The DW-MTJ logic gate supports different fanouts, allowing for multiple inputs and outputs for a single device without affecting the area. We simulate a systolic array of DW-MTJ multiply-accumulate (MAC) units with 4-bit and 8-bit precision, which uses the nonvolatility of DW-MTJ logic gates to enable fine-grained pipelining and high parallelism. The DW-MTJ systolic array provides comparable throughput and efficiency to state-of-the-art CMOS systolic arrays while being radiation-hard. These results improve the feasibility of using DW-based processors, especially for extreme-environment applications such as space.

More Details
TYPE Journal Article YEAR 2023
DOIOSTIScopusDOIOSTIScopus
Results 2626–2650 of 99,299
Results 2626–2650 of 99,299