Publications

Abstract not provided.

We have integrated an ultrahigh mobility twodimensional electron gas with a high-quality-factor terahertz photonic cavity. With a quantizing magnetic field and at low temperatures, we demonstrated collective nonperturbative coupling of the electron cyclotron resonance with terahertz cavity photons with a high cooperativity. Due to the suppression of superradiance-induced broadening of cyclotron resonance by the high-quality-factor cavity, our hybrid quantum system exhibited unprecedentedly sharp polariton lines and a large vacuum Rabi splitting simultaneously.

The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.

ZrTe₅, a topological semimetal, has recently attracted great attention due to its extraordinary electronic properties. Extensive studies have been carried out in ZrTe₅ on their charge transport properties. However, there are few studies on their spin properties. One well-developed technique to study spin degeneracy of a Landau level (LL) in a two-dimensional system is by tilting magnetic field. It is known that the Landau level energy is proportional to the magnetic field normal component while the Zeeman energy scales with the total magnetic field. Therefore, these two energy scales can be tuned relatively to each other in a tilted magnetic field.

Abstract not provided.

The collective interaction of electrons with light in a high-quality-factor cavity is expected to reveal new quantum phenomena and find applications in quantum-enabled technologies. However, combining a long electronic coherence time, a large dipole moment, and a high quality-factor has proved difficult. Here, we achieved these conditions simultaneously in a two-dimensional electron gas in a high-quality-factor terahertz cavity in a magnetic field. The vacuum Rabi splitting of cyclotron resonance exhibited a square-root dependence on the electron density, evidencing collective interaction. This splitting extended even where the detuning is larger than the resonance frequency. Furthermore, we observed a peak shift due to the normally negligible diamagnetic term in the Hamiltonian. Finally, the high-quality-factor cavity suppressed superradiant cyclotron resonance decay, revealing a narrow intrinsic linewidth of 5.6 GHz. High-quality-factor terahertz cavities will enable new experiments bridging the traditional disciplines of condensed-matter physics and cavity-based quantum optics.

A three-dimensional (3D) Dirac semimetal (DS) is an analogue of graphene, but with linear energy dispersion in all (three) momentum directions. 3D DSs have been a fertile playground in discovering novel quantum particles, for example Weyl fermions, in solid state systems. Many 3D DSs were theoretically predicted and experimentally confirmed. We report here the results in exfoliated ZrTe 5 thin flakes from the studies of aberration-corrected scanning transmission electron microscopy and low temperature magneto-transport measurements. Several unique results were observed. First, a π Berry phase was obtained from the Landau fan diagram of the Shubnikov-de Haas oscillations in the longitudinal conductivity σxx. Second, the longitudinal resistivity ρxx shows a linear magnetic field dependence in the quantum limit regime. Most surprisingly, quantum oscillations were also observed at fractional Landau level indices N = 5/3 and 7/5, demonstrating strong electron-electron interaction effects in ZrTe5.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Atomic-scale phenomena fundamentally influence materials form and function that makes the ability to locally probe and study these processes critical to advancing our understanding and development of materials. Atomic-scale chemical imaging by scanning transmission electron microscopy (STEM) using energy-dispersive X-ray spectroscopy (EDS) is a powerful approach to investigate solid crystal structures. Inefficient X-ray emission and collection, however, require long acquisition times (typically hundreds of seconds), making the technique incompatible with electron-beam sensitive materials and study of dynamic material phenomena. Here we describe an atomic-scale STEM-EDS chemical imaging technique that decreases the acquisition time to as little as one second, a reduction of more than 100 times. We demonstrate this new approach using LaAlO3 single crystal and study dynamic phase transformation in beam-sensitive Li[Li0.2Ni0.2Mn0.6]O2 (LNMO) lithium ion battery cathode material. By capturing a series of time-lapsed chemical maps, we show for the first time clear atomic-scale evidence of preferred Ni-mobility in LNMO transformation, revealing new kinetic mechanisms. These examples highlight the potential of this approach toward temporal, atomic-scale mapping of crystal structure and chemistry for investigating dynamic material phenomena.

Abstract not provided.

Abstract not provided.

Abstract not provided.

We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible at fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. We discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.

Recently, it has been predicted that topological crystalline insulators (TCIs) may exist in SnTe and Pb_1-xSn_xTe thin films [1]. To date, most studies on TCIs were carried out either in bulk crystals or thin films, and no research activity has been explored in heterostructures. We present here the results on electronic transport properties of the 2D electron gas (2DEG) realized at the interfaces of PbTe/ CdTe (111) heterostructures. Evidence of topological state in this interfacial 2DEG was observed.

Abstract not provided.

We introduce a near-field scanning probe terahertz (THz) microscopy technique for probing surface plasmon waves on graphene. Based on THz time-domain spectroscopy method, this near-field imaging approach is well suited for studying the excitation and evolution of THz plasmon waves on graphene as well as for mapping of graphene properties at THz frequencies on the sub-wavelength scale.

A great deal of research has been carried out in oxide material systems. Among them, ZnO and La_0.7Sr_0.3MnO₃ (LSMO) are of particular interest due to their superb optical properties and colossal magneto-resistive effect. Here, we report our recent results of magneto-transport studies in self-assembled, epitaxial (ZnO)0.5:(La_0.7Sr_0.3MnO₃)_0.5 nanocomposite films.

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

Abstract not provided.

Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T - H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.

Abstract not provided.

We have fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. Surprisingly, a much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. Electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor v = 1, unambiguously reveal a Π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

Abstract not provided.

Abstract not provided.

Abstract not provided.

We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1-10] crystallographic direction, but remains more or less isotropic when Bip[110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν=5/2 anisotropy.

Two-dimensional hole gases (2DHGs) have attracted recent attention for their unique quantum physics and potential applications in areas including spintronics and quantum computing. However, their properties remain relatively unexplored, motivating the use of different techniques to study them. We used terahertz magneto-optical spectroscopy to investigate the cyclotron resonance frequency in a high mobility 2DHG, revealing a nonlinear dependence on the applied magnetic field. This is shown to be due to the complex non-parabolic valence band structure of the 2DHG, as verified by multiband Landau level calculations. We also find that impurity scattering dominates cyclotron resonance decay in the 2DHG, in contrast with the dominance of superradiant damping in two-dimensional electron gases. Our results shed light on the properties of 2DHGs, motivating further studies of these unique 2D nanosystems.

We report low-temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν=4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ∼7mK. Developing Hall plateaus were also observed at the neighboring states at ν=3/8and5/13.

Up to date, studies of the fractional quantum Hall effect (FQHE) states in the second Landau level have mainly been carried out in the high electron density regime, where the electron mobility is the highest. Only recently, with the advance of high quality low density MBE growth, experiments have been pushed to the low density regime [1], where the electron-electron interactions are strong and the Landau level mixing parameter, defined by κ = e²/εI_B/ℏω_e, is large. Here, l_B = (ℏe/B)^1/2 is the magnetic length and ω_c = eB/m the cyclotron frequency. All other parameters have their normal meanings. It has been shown that a large Landau level mixing effect strongly affects the electron physics in the second Landau level [2].

Abstract not provided.

High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm²/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

Abstract not provided.

Abstract not provided.

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 1015cm-2 (or 1.25 × 1014cm-2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Abstract not provided.

The goal of this project is to search for Majorana fermions (a new quantum particle) in a topological superconductor (a new quantum matter achieved in a topological insulator proximitized by an s-wave superconductor). Majorana fermions (MFs) are electron-like particles that are their own anti-particles. MFs are shown to obey non-Abelian statistics and, thus, can be harnessed to make a fault-resistant topological quantum computer. With the arrival of topological insulators, novel schemes to create MFs have been proposed in hybrid systems by combining a topological insulator with a conventional superconductor. In this LDRD project, we will follow the theoretical proposals to search for MFs in one-dimensional (1D) topological superconductors. 1D topological superconductor will be created inside of a quantum point contact (with the metal pinch-off gates made of conventional s-wave superconductors such as niobium) in a two-dimensional topological insulator (such as inverted type-II InAs/GaSb heterostructure).

We report the design, construction, and characterization of a biaxial sample rotation stage for use in a cryogenic system for orientation-dependent studies of anisotropic electronic transport phenomena at low temperatures and high magnetic fields. Our apparatus allows for continuous rotation of a sample about two axes, both independently and simultaneously.

Abstract not provided.

Abstract not provided.

Abstract not provided.

In this paper, we study the Bloch oscillations of a two-dimensional electron gas with a strong periodic potential-modulation and miniband transport along the field at low temperatures, assuming a free motion in the transverse direction. The dependence of the current on the field, the electron density, and the temperature is investigated by using a relaxation-time approximation for inelastic scattering. Moreover, for a fixed total scattering rate, the field dependence of the current is sensitive to the ratio of the elastic and inelastic scattering rates in contrast with the recent result of a multiband but otherwise similar model with a weak potential modulation.